公开(公告)号：US20100029969A1

公开(公告)日：2010-02-04

申请号：US12578182

申请日：2009-10-13

Applicant: Minoru OTANI ,  Jun HISADA ,  Toyoki MAWATARI

Inventor： Minoru OTANI ,  Jun HISADA ,  Toyoki MAWATARI

IPC: C07F1/08

CPC classification number: C23C18/08

Abstract: The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): [R1COO]n[NH3]mCuX1p  (1) where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R1 respectively represent the following Formula (2), CH2X2, CH2X2(CHX2)q, NH2, or H, and may be the same or different from each other, or n is 2 and two pieces of [R1COO] represent together the following Formula (3); R2, R3, and R4 are respectively CH2X2, CH2X2(CHX2)q, NH2, or H; R5 is —(CHX2)r—; X2 is H, OH, or NH2; r is 0 to 4; q is 1 to 4; and X1 is NH4+, H2O, or solvent molecules According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.

Abstract translation: 本发明提供一种铜化合物，其分解温度在100℃至300℃的范围内，并且包括由下式（1）表示的一个单元或多个连接单元：[R 1 COO] n [NH 3] mCuX1p（1）其中n为1至3; m为1〜3; p为0〜1; n个R1分别表示下式（2），CH2X2，CH2X2（CHX2）q，NH2或H，可以相同或不同，或n为2，两个[R 1 COO]表示在一起 以下公式（3）; R2，R3和R4分别是CH2X2，CH2X2（CHX2）q，NH2或H; R5是 - （CHX2）r-; X2是H，OH或NH2; r为0〜4; q为1〜4; X 1为NH 4 +，H 2 O或溶剂分子根据上述结构，提供了能够安全，廉价且容易地形成电子器件等制造所需的铜薄膜的铜化合物及其制造方法 使用铜化合物的铜薄膜。

公开(公告)号：US20050003086A1

公开(公告)日：2005-01-06

申请号：US10881276

申请日：2004-06-30

Applicant: Minoru Otani ,  Jun Hisada ,  Toyoki Mawatari

Inventor： Minoru Otani ,  Jun Hisada ,  Toyoki Mawatari

IPC: C07F1/08 ,  C07F1/00 ,  C23C18/08 ,  H05K3/40 ,  C23C16/00

CPC classification number: C23C18/08

Abstract: The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): [R1COO]n[NH3]mCuX1p   (1) where n is 1 to 3; m is 1 to 3; p is 0 to 1; n pieces of R1 respectively represent the following Formula (2), CH2X2, CH2X2(CHX2)q, NH2, or H, and may be the same or different from each other, or n is 2 and two pieces of [R1COO] represent together the following Formula (3); R2, R3, and R4 are respectively CH2X2, CH2X2(CHX2)q, NH2, or H; R5 is —(CHX2)r—; X2 is H, OH, or NH2; r is 0 to 4; q is 1 to 4; and X1 is NH4+, H2O, or solvent molecules According to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.

Abstract translation: 本发明提供一种分解温度在100℃至300℃的铜化合物，并且包括由下式（1）表示的一个单元或多个连接单元：[R 1 COO] n [NH 3] mCuX 1 p（1）其中n为1至3; m为1〜3; p为0〜1; n个R 1分别表示下式（2），CH 2 X 2，CH 2 X 2（CHX 2）q，NH 2或H，并且可以彼此相同或不同，或 n为2，两个[R 1 COO]一起表示下式（3）。 R 2，R 3和R 4分别为CH 2 X 2，CH 2 X 2（CHX 2）q，NH 2或H; R 5为 - （CHX 2）r - ; X 2是H，OH或NH 2; r为0〜4; q为1〜4; X 1是NH 4 +，H 2 O或溶剂分子根据上述结构，提供了能够安全，廉价且容易地形成电子器件等制造所需的铜薄膜的铜化合物， 使用铜化合物的铜薄膜的制造方法。