公开(公告)号：US5657335A

公开(公告)日：1997-08-12

申请号：US146502

申请日：1993-11-01

申请人： Michael Rubin ,  Nathan Newman ,  Tracy Fu ,  Jennifer Ross ,  James Chan

发明人： Michael Rubin ,  Nathan Newman ,  Tracy Fu ,  Jennifer Ross ,  James Chan

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/2233 ,  H01L21/26546 ,  H01L33/007 ,  H01L33/325

摘要： Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

摘要翻译： 已经发现了几种制造p型氮化镓的方法。 长期以来一直在寻求电子器件的P型氮化镓。 N型氮化镓容易获得。 发现p型氮化镓及其制造方法将能够用于紫外线和蓝色发光二极管和激光器。 pGaN将进一步使得能够制造蓝色光电阴极元件。 在适当温度下保持的衬底上的分子束外延由适当能量的氮气束辅助产生几种类型的具有约5×10 11 / cm 3的空穴浓度和约500cm 2 / V-sec的空穴迁移率的p型GaN，其在 250°K .P型GaN可以由无意掺杂的材料形成，或者可以通过扩散，离子注入或共蒸发掺杂镁。 当适用时，氮气可以被其他III族元素如Al取代。