公开(公告)号：US06617189B1

公开(公告)日：2003-09-09

申请号：US10063949

申请日：2002-05-28

Applicant: Tze-Jing Chen ,  Ching-Chung Chen ,  Tung-Hu Lin ,  Chen-Bin Lin ,  Chi-Rong Lin

Inventor： Tze-Jing Chen ,  Ching-Chung Chen ,  Tung-Hu Lin ,  Chen-Bin Lin ,  Chi-Rong Lin

IPC: H01L2100

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

Abstract: A method of fabricating an image sensor on a semiconductor substrate including a sensor array region is introduced. First, an R/G/B color filter array (CFA) is formed on portions of the semiconductor substrate corresponding to the sensor array region. Then, a spacer layer is formed on the R/G/B CFA, and a plurality of U-lens is formed on the spacer layer corresponding to the R/G/B CFA. Afterwards, a buffer layer is coated to fill a space between the U-lens, and a low-temperature passivation layer is deposited on the buffer layer and the U-lens at a temperature of about 300° C. or less to prevent the R/G/B CFA from damage.

Abstract translation: 引入了在包括传感器阵列区域的半导体衬底上制造图像传感器的方法。 首先，在对应于传感器阵列区域的半导体衬底的部分上形成R / G / B滤色器阵列（CFA）。 然后，在R / G / B CFA上形成间隔层，在对应于R / G / B CFA的间隔层上形成多个U型透镜。 然后，涂覆缓冲层以填充U型透镜之间的空间，并且在约300℃或更低的温度下在缓冲层和U型透镜上沉积低温钝化层以防止R / G / B CFA从损坏。