公开(公告)号：US4115163A

公开(公告)日：1978-09-19

申请号：US647327

申请日：1976-01-08

Applicant: Yulia Ivanovna Gorina ,  Galina Alexandrovna Kaljuzhnaya ,  Andrei Vasilievich Kuznetsov ,  Sergei Nikolaevich Maximovsky ,  Mikhail Borisovich Nikiforov ,  Bentsion Moiseevich Vul ,  Galina Evgenievna Ivannikova ,  Vintsentas Ionovich Denis ,  Mikolas Mikolo Yarmalis ,  Vitautas Ionovich Repshis

Inventor： Yulia Ivanovna Gorina ,  Galina Alexandrovna Kaljuzhnaya ,  Andrei Vasilievich Kuznetsov ,  Sergei Nikolaevich Maximovsky ,  Mikhail Borisovich Nikiforov ,  Bentsion Moiseevich Vul ,  Galina Evgenievna Ivannikova ,  Vintsentas Ionovich Denis ,  Mikolas Mikolo Yarmalis ,  Vitautas Ionovich Repshis

IPC: C23C14/54 ,  C30B23/06 ,  H01L21/205 ,  H01L21/365

CPC classification number: C30B23/063 ,  C23C14/541 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/02417 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  Y10S148/048 ,  Y10S148/071

Abstract: A method of growing epitaxial semiconductor films on substrates is proposed which consists in that a substrate is cleaned from damage layers and heated to a critical epitaxy temperature simultaneously by irradiating a substrate surface with an intensive luminous flux. A source material for growing a film is introduced to the substrate in a gaseous state. When producing multi-layer semiconductor structures, a substrate surface opposite to a surface exposed to the luminous flux is cooled to a temperature sufficient to prevent mutual diffusion between the film and the substrate materials. Versions of an apparatus for carrying this method into effect are also proposed. The apparatus includes a quartz chamber with a vaporizer for vaporizing the source material for film growing, a means for supporting the substrate and openings for introducing a neutral or reducing agent. The apparatus is provided with furnaces for heating the walls of the chamber. Each apparatus has a powerful light source disposed outside the chamber so as to face a working surface of the substrate support.

Abstract translation: 提出了一种在衬底上生长外延半导体膜的方法，其方法是通过用强烈的光通量照射衬底表面，同时通过将衬底从损伤层中清除并加热至临界外延温度。 用于生长膜的源材料以气态引入衬底。 当制造多层半导体结构时，与暴露于光通量的表面相对的衬底表面被冷却到足以防止膜和衬底材料之间的相互扩散的温度。 还提出了用于实施该方法的装置的版本。 该装置包括具有用于蒸发用于膜生长的源材料的蒸发器的石英腔，用于支撑衬底的装置和用于引入中性或还原剂的开口。 该设备设置有用于加热室的壁的炉。 每个设备具有设置在室外部的强大的光源，以面对基板支撑件的工作表面。