公开(公告)号：US11982017B2

公开(公告)日：2024-05-14

申请号：US18037565

申请日：2021-06-11

申请人： NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES

发明人： Ruyi Zhang ,  Yanwei Cao ,  Yang Song ,  Shaoqin Peng ,  Jiachang Bi

IPC分类号： C23C14/08 ,  C30B23/02 ,  C30B23/06 ,  C30B29/22 ,  H01J37/34

CPC分类号： C30B29/22 ,  C23C14/08 ,  C23C14/082 ,  C23C14/086 ,  C30B23/025 ,  C30B23/063 ,  H01J37/3405 ,  H01J37/3426 ,  H01J2237/332

摘要： A method for fabricating a transparent conductive oxide thin film, the method comprising the following steps: fabricating Ba1-xLaxSnO3 using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and fabricating a BLSO thin film by means of direct deposition with argon as a sputtering gas by using a SrTiO3, MgO, LaAlO3, (La,Sr)(Al,Ta)O3(LSAT), MgAl2O4 or Al2O3 single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is fabricate is provided. During sputtering, the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa. The room-temperature mobility of the transparent conductive oxide thin film can reach 115 cm2/V·s, the room-temperature carrier concentration can reach 1.2×1021 cm−3, and the room-temperature conductivity can reach 14,000 S/cm.

公开(公告)号：US11932967B2

公开(公告)日：2024-03-19

申请号：US17764116

申请日：2020-09-24

申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYOTA TSUSHO CORPORATION

发明人： Tadaaki Kaneko

IPC分类号： C30B33/02 ,  C30B23/02 ,  C30B23/06 ,  C30B33/12

CPC分类号： C30B33/02 ,  C30B23/025 ,  C30B23/063 ,  C30B33/12

摘要： An object of the present invention is to provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation. In order to solve the above problems, the present invention provides a method for producing SiC single crystals, including a stress reduction step of heating a SiC single crystal at 1800° C. or higher in an atmosphere containing Si and C elements to reduce internal stress in the SiC single crystal. With this configuration, the present invention can provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation.

公开(公告)号：US11859311B2

公开(公告)日：2024-01-02

申请号：US17846768

申请日：2022-06-22

申请人： Panasonic Holdings Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Shigeyoshi Usami ,  Junichi Takino ,  Shunichi Matsuno

IPC分类号： C30B25/16 ,  C30B29/40 ,  C30B23/00 ,  C30B23/06

CPC分类号： C30B29/403 ,  C30B23/002 ,  C30B23/063 ,  C30B25/165

摘要： A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y

公开(公告)号：US20230257869A1

公开(公告)日：2023-08-17

申请号：US18013124

申请日：2020-10-22

申请人： QORVO BIOTECHNOLOGIES, LLC

发明人： Derya Deniz ,  Philip Johnston ,  Jay Helland ,  John Belsick ,  Kevin McCarron

IPC分类号： C23C14/56 ,  H03H3/02 ,  H03H9/17 ,  H01J37/34 ,  H01J37/32 ,  C23C14/54 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/22 ,  C30B23/00 ,  C30B23/06

CPC分类号： C23C14/566 ,  H03H3/02 ,  H03H9/173 ,  H03H9/175 ,  H01J37/3447 ,  H01J37/32899 ,  H01J37/32743 ,  H01J37/32458 ,  H01J37/3417 ,  H01J37/3405 ,  C23C14/568 ,  C23C14/541 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/225 ,  C30B23/005 ,  C30B23/063 ,  H03H2003/021 ,  H03H2003/025 ,  H01J2237/20285 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/201 ,  H01J2237/2007 ,  H01J2237/0455

摘要： A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

公开(公告)号：US20230203704A1

公开(公告)日：2023-06-29

申请号：US17996091

申请日：2021-03-30

申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYOTA TSUSHO CORPORATION

发明人： Tadaaki KANEKO ,  Daichi DOJIMA

IPC分类号： C30B23/02 ,  C30B23/06 ,  C30B29/40 ,  H01L21/02

CPC分类号： C30B23/025 ,  C30B23/063 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02631

摘要： An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in the growth layer.
The present invention is a method for manufacturing a semiconductor substrate, which includes: an embrittlement processing step S10 of reducing strength of an underlying substrate 10; and a crystal growth step S20 of forming the growth layer 20 on the underlying substrate 10. In addition, the present invention is a method for suppressing the occurrence of cracks in the growth layer 20, and this method includes an embrittlement processing step S10 of reducing the strength of the underlying substrate 10 before forming the growth layer 20 on the underlying substrate 10.

公开(公告)号：US20180142375A1

公开(公告)日：2018-05-24

申请号：US15819477

申请日：2017-11-21

申请人： Rutgers, The State University of New Jersey

发明人： Seongshik Oh ,  Matthew J. Brahlek ,  Nikesh Koirala ,  Maryam Salehi

IPC分类号： C30B23/02 ,  H01L21/02 ,  H01L29/24 ,  C30B29/46

CPC分类号： C30B23/025 ,  C30B23/063 ,  C30B29/46 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/02598 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/24

摘要： A method of making high quality insulating single crystalline In2Se3 films by (1) depositing at least one quintuple layer (QL) of Bi2Se3 on a substrate layer at a temperature below which only the Se adheres to the substrate; (2) depositing a plurality of In2Se3 QL's on the deposited Bi2Se3 layer or layers at a temperature between about 200° C. and about 330° C. to form a hetero-structure; and (3) heating the hetero-structure to a temperature between about 400° C. and about 700° C. so that the Bi2Se3 layer is diffused through the In2Se3 layer and evaporated away.

公开(公告)号：US09157169B2

公开(公告)日：2015-10-13

申请号：US11531508

申请日：2006-09-13

申请人： Paul Bridger ,  Robert Beach

发明人： Paul Bridger ,  Robert Beach

IPC分类号： C30B25/02 ,  C30B23/00 ,  C30B29/40 ,  H01L33/04 ,  C30B23/06 ,  C30B25/10 ,  C30B25/16 ,  H01L21/02

CPC分类号： H01L21/02507 ,  C30B23/002 ,  C30B23/063 ,  C30B25/02 ,  C30B25/10 ,  C30B25/16 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/04

摘要： A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

摘要翻译： 一种用于制造包括高温和低温生长步骤的III族氮化物半导体体的方法。

公开(公告)号：US08888913B2

公开(公告)日：2014-11-18

申请号：US13206310

申请日：2011-08-09

申请人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

发明人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

IPC分类号： C30B21/02 ,  C30B23/06 ,  C23C16/458 ,  C30B25/12 ,  C23C16/24

CPC分类号： C23C16/24 ,  C23C16/4585 ,  C23C16/4586 ,  C30B23/063 ,  C30B25/12 ,  H01L21/68735

摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。

公开(公告)号：US20120107218A1

公开(公告)日：2012-05-03

申请号：US13376457

申请日：2011-02-16

申请人： Taro Nishiguchi

发明人： Taro Nishiguchi

IPC分类号： C01B31/36 ,  C30B23/06 ,  C30B23/02

CPC分类号： C30B29/36 ,  C30B23/063

摘要： A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the crucible. A source material is placed in the crucible. A seed crystal is placed opposite to the source material in the crucible. The silicon carbide crystal is grown by heating the source material in the crucible for sublimation thereof and depositing resultant source material gas on the seed crystal. The step of preparing the production device includes the step of providing a heat dissipation portion, which is constituted by a space, between the heat insulator and an outer surface of the crucible at a side of the seed crystal.

摘要翻译： SiC晶体的制造方法包括以下步骤。 也就是说，制备了包括坩埚和覆盖坩埚的外周的绝热体的生产装置。 源材料放置在坩埚中。 将晶种放置在坩埚中与源材料相对的位置。 碳化硅晶体通过加热坩埚中的源材料升华而生长，并将所得的源材料气体沉积在晶种上。 制备生产装置的步骤包括在晶种的一侧在隔热件和坩埚的外表面之间提供由空间构成的散热部分的步骤。

公开(公告)号：US08021484B2

公开(公告)日：2011-09-20

申请号：US11731815

申请日：2007-03-30

申请人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

发明人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

IPC分类号： C30B21/06

CPC分类号： C23C16/24 ,  C23C16/4585 ,  C23C16/4586 ,  C30B23/063 ,  C30B25/12 ,  H01L21/68735

摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。