公开(公告)号：US07650271B2

公开(公告)日：2010-01-19

申请号：US11395537

申请日：2006-03-31

申请人： Frank P. O'Mahony ,  Haydar Kutuk ,  Bryan K. Casper ,  Eyal Fayneh ,  Sivakumar Mudanai ,  Wei-kai Shih ,  Farag Fattouh

发明人： Frank P. O'Mahony ,  Haydar Kutuk ,  Bryan K. Casper ,  Eyal Fayneh ,  Sivakumar Mudanai ,  Wei-kai Shih ,  Farag Fattouh

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.

摘要翻译： 通常，在一个方面，本公开描述了一种用于在时域电路仿真中模拟各种类型的器件噪声的模拟器。 模拟器能够为晶体管以及无源元件（如电阻）增加噪声。 模拟器使用与设备并联的至少一个电流源来模拟噪声。 电流源产生随机电流输出以根据随机高斯数和器件噪声的标准偏差来模拟器件噪声。 可以基于在该模拟时间和更新时间具有特定偏压的装置的噪声功率谱密度来确定噪声标准偏差。 模拟器能够通过利用具有不同更新步骤的多个电流源来模拟具有恒定或单调降低的噪声频谱（例如，热噪声，闪烁噪声）的任何噪声源。 模拟器与标准电路模拟器兼容。

公开(公告)号：US20070233444A1

公开(公告)日：2007-10-04

申请号：US11395537

申请日：2006-03-31

申请人： Frank O'Mahony ,  Haydar Kutuk ,  Bryan Casper ,  Eyal Fayneh ,  Sivakumar Mudanai ,  Wei-kai Shih ,  Farag Fattouh

发明人： Frank O'Mahony ,  Haydar Kutuk ,  Bryan Casper ,  Eyal Fayneh ,  Sivakumar Mudanai ,  Wei-kai Shih ,  Farag Fattouh

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.

摘要翻译： 通常，在一个方面，本公开描述了一种用于在时域电路仿真中模拟各种类型的器件噪声的模拟器。 模拟器能够为晶体管以及无源元件（如电阻）增加噪声。 模拟器使用与设备并联的至少一个电流源来模拟噪声。 电流源产生随机电流输出以根据随机高斯数和器件噪声的标准偏差来模拟器件噪声。 可以基于在该模拟时间和更新时间具有特定偏压的装置的噪声功率谱密度来确定噪声标准偏差。 模拟器能够通过利用具有不同更新步骤的多个电流源来模拟具有恒定或单调降低的噪声频谱（例如，热噪声，闪烁噪声）的任何噪声源。 模拟器与标准电路模拟器兼容。

公开(公告)号：US20080079116A1

公开(公告)日：2008-04-03

申请号：US11542540

申请日：2006-10-03

申请人： Luo Yuan ,  Derchang Kau ,  Wei-Kai Shih ,  Shafqat Ahmed ,  Brian K. Armstrong

发明人： Luo Yuan ,  Derchang Kau ,  Wei-Kai Shih ,  Shafqat Ahmed ,  Brian K. Armstrong

IPC分类号： H01L29/00

CPC分类号： H01L29/93 ,  H01L29/94 ,  H03B5/1215 ,  H03B5/1228 ,  H03B5/1253 ,  H03L7/093 ,  H03L7/099

摘要： An MOS varactor may be formed without tip implants or HALO implants. As a result, parasitic resistance may be reduced, jitter may be improved, and the quality factor may be increased, as well as the tunable range of the varactor.

摘要翻译： 可以形成MOS变容管体，无尖端植入物或HALO植入物。 结果，可以减小寄生电阻，可以提高抖动，并且可以提高品质因数以及变容二极管的可调范围。

公开(公告)号：US20080079051A1

公开(公告)日：2008-04-03

申请号：US11529943

申请日：2006-09-29

申请人： Luo Yuan ,  Derchang Kau ,  Wei-Kai Shih ,  Shafqat Ahmed ,  Brian K. Armstrong

发明人： Luo Yuan ,  Derchang Kau ,  Wei-Kai Shih ,  Shafqat Ahmed ,  Brian K. Armstrong

IPC分类号： H01L29/94 ,  H01L21/20

CPC分类号： H01L29/7833 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/6659

摘要： A metal oxide semiconductor varactor may be formed with HALO implants regions having an opposite polarity from the polarity of the well of the varactor. The HALO implant regions can be angled away from the source and drain. The HALO implant regions can stop the depletion from continuing as the bias voltage applied to the gate continues to increase. Stopping that depletion can create a constant capacitance when the varactor is in a depletion bias.

摘要翻译： 金属氧化物半导体变容二极管可以形成为具有与变容二极管的极性相反极性的HALO注入区域。 HALO植入区域可以远离源极和漏极成角度。 随着施加到栅极的偏置电压继续增加，HALO注入区域可以阻止耗尽继续。 当变容二极管处于耗尽偏压时，停止耗尽可产生恒定电容。