公开(公告)号：US3982266A

公开(公告)日：1976-09-21

申请号：US530774

申请日：1974-12-09

Applicant: Walter T. Matzen ,  Wilton L. Workman

Inventor： Walter T. Matzen ,  Wilton L. Workman

IPC: H01L21/8226 ,  H01L27/02 ,  H01L27/082 ,  H01L29/06 ,  H01L29/732 ,  H03K19/091 ,  H01L27/04

CPC classification number: H01L27/0233 ,  H01L21/8226 ,  H01L27/0821 ,  H01L29/0649 ,  H01L29/7327 ,  H03K19/091 ,  Y10S148/098 ,  Y10S148/117 ,  Y10S148/136

Abstract: An integrated injection logic (IIL) structure including active devices, one of which is a switching transistor having base current injection from another active device where an epitaxial zone forms an emitter-base junction. A diffused zone in the epitaxial layer forms a collector for the switching transistor and an insulating structure defines perimeters of the collector-base junction and the emitter-base junction such that the widths thereof are about equal for maximizing current gain with minimal temperature dependence.

Abstract translation: 包括有源器件的集成注入逻辑（IIL）结构，其中一个是具有来自另一个有源器件的基极电流注入的开关晶体管，其中外延区形成发射极 - 基极结。 外延层中的扩散区形成用于开关晶体管的集电极，并且绝缘结构限定集电极 - 基极结和发射极 - 基极结的周长，使得其宽度大致相等，以便以最小的温度依赖性最大化电流增益。