公开(公告)号：US5854117A

公开(公告)日：1998-12-29

申请号：US715059

申请日：1996-09-17

申请人： Frederikus R. J. Huisman ,  Oscar J. A. Buyk ,  Wolfgang Bindke

发明人： Frederikus R. J. Huisman ,  Oscar J. A. Buyk ,  Wolfgang Bindke

IPC分类号： H01L21/225 ,  H01L21/329 ,  H01L29/93 ,  H01L21/20 ,  H01L21/425

CPC分类号： H01L29/66174 ,  H01L29/93

摘要： The invention relates to a method of manufacturing a varicap diode whereby a silicon substrate with an epitaxial layer of a first conductivity type is provided with a first zone through the provision of dopant atoms of a first conductivity type in the epitaxial layer and is provided with a second zone adjoining a surface of the epitaxial layer through the provision of dopant atoms of a second conductivity type opposed to the first in the epitaxial layer, a pn junction being formed between the second zone and the first zone. According to the invention, the method is characterized in that the second zone is provided in that a layer of polycrystalline silicon provided with dopant atoms of the second conductivity type is provided on the surface, and in that the dopant atoms are diffused from this layer into the epitaxial layer, whereby a pn junction is formed at a distance of less than 0.3 .mu.m from the polycrystalline silicon. The measure according to the invention leads to the manufacture of a varicap diode with a pn junction which shows a wide variation in capacitance of the depleted region around the pn junction for a comparatively small variation in reverse voltage across the pn junction.

摘要翻译： 本发明涉及制造变容二极管的方法，其中具有第一导电类型的外延层的硅衬底通过在外延层中提供第一导电类型的掺杂剂原子而设置有第一区，并且设置有 第二区，通过提供与外延层中的第一导电类型相对的第二导电类型的掺杂剂原子邻接外延层的表面，在第二区和第一区之间形成pn结。 根据本发明，该方法的特征在于，第二区域的特征在于，在表面上提供了设置有第二导电类型的掺杂剂原子的多晶硅层，并且掺杂剂原子从该层扩散到 外延层，由此在与多晶硅相距0.3μm的距离处形成pn结。 根据本发明的措施导致制造具有pn结的变容二极管，其在pn结周围的反向电压的相对小的变化中显示出在pn结周围的耗尽区的电容的宽的变化。