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公开(公告)号:US08563990B2
公开(公告)日:2013-10-22
申请号:US12419900
申请日:2009-04-07
IPC分类号: H01L33/00
CPC分类号: H01L27/288 , G02B6/43 , H01L24/73 , H01L25/0657 , H01L25/167 , H01L27/32 , H01L31/0203 , H01L2224/48091 , H01L2225/0651 , H01L2225/06527 , H01L2225/06572 , H01L2225/06575 , H01L2924/01046 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes.
摘要翻译: 一种电子装置,包括至少一个具有至少一个第一管芯(D1)的管芯堆叠,所述第一管芯(D1)包括用于发射光的第一发光单元阵列(OLED),包括通孔(VH)的第二阵列的第二层(D2) 提供了包括用于检测来自第一阵列的发光单元(OELD)的光的第三阵列的光检测单元(PD)的第三裸片(D3)。 第二层(D2)布置在第一管芯(D1)和第三管芯(D3)之间。 对准第一,第二和第三阵列,使得从第一阵列的发光单元(OLED)发射的光穿过第二阵列的通孔(VH)并被第三阵列的光检测单元(PD)检测。 基于标准半导体制造工艺制造第一阵列的发光单元和/或第三阵列的光检测单元。
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公开(公告)号:US20090289265A1
公开(公告)日:2009-11-26
申请号:US12419900
申请日:2009-04-07
IPC分类号: H01L33/00
CPC分类号: H01L27/288 , G02B6/43 , H01L24/73 , H01L25/0657 , H01L25/167 , H01L27/32 , H01L31/0203 , H01L2224/48091 , H01L2225/0651 , H01L2225/06527 , H01L2225/06572 , H01L2225/06575 , H01L2924/01046 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes.
摘要翻译: 一种电子装置,包括至少一个具有至少一个第一管芯(D1)的管芯堆叠,所述第一管芯(D1)包括用于发射光的第一发光单元阵列(OLED),包括通孔(VH)的第二阵列的第二层(D2) 提供了包括用于检测来自第一阵列的发光单元(OELD)的光的第三阵列的光检测单元(PD)的第三裸片(D3)。 第二层(D2)布置在第一管芯(D1)和第三管芯(D3)之间。 对准第一,第二和第三阵列,使得从第一阵列的发光单元(OLED)发射的光穿过第二阵列的通孔(VH)并被第三阵列的光检测单元(PD)检测。 基于标准半导体制造工艺制造第一阵列的发光单元和/或第三阵列的光检测单元。
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公开(公告)号:US20100331769A1
公开(公告)日:2010-12-30
申请号:US12446468
申请日:2007-10-23
CPC分类号: B41J2/162 , A61C17/02 , A61M5/30 , B41J2/1433 , B41J2/1606 , B41J2/1626 , B41J2002/14475 , Y10T29/494
摘要: A nozzle for jetting devices is described comprising e.g. one patterned silicon substrate enabling semiconductor mass production. The method of manufacturing the nozzle is characterized by using one mask layer deposited on the silicon substrate. The etching of the silicon substrate is done by means of a first isotropic etching step and a second anisotropic etching step through the mask layer, resulting in a perfectly aligned nozzle.
摘要翻译: 描述了用于喷射装置的喷嘴, 一个图案化的硅衬底,可实现半导体批量生产。 制造喷嘴的方法的特征在于使用沉积在硅衬底上的一个掩模层。 硅衬底的蚀刻通过第一各向同性蚀刻步骤和通过掩模层的第二各向异性蚀刻步骤完成,从而形成完美排列的喷嘴。
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