公开(公告)号：US07022627B2

公开(公告)日：2006-04-04

申请号：US10700298

申请日：2003-10-31

Applicant: Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pagès ,  Pascal G. Vermont

Inventor： Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pagès ,  Pascal G. Vermont

IPC: H01L21/26

CPC classification number: H01L21/67109 ,  H01L21/324 ,  H01L21/6838

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.