公开(公告)号：US07410355B2

公开(公告)日：2008-08-12

申请号：US11356697

申请日：2006-02-17

Applicant: Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pages ,  Pascal G. Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

Inventor： Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pages ,  Pascal G. Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

IPC: H01L21/02

CPC classification number: H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67784 ,  H01L21/6838

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract translation: 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

公开(公告)号：US07022627B2

公开(公告)日：2006-04-04

申请号：US10700298

申请日：2003-10-31

Applicant: Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pagès ,  Pascal G. Vermont

Inventor： Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pagès ,  Pascal G. Vermont

IPC: H01L21/26

CPC classification number: H01L21/67109 ,  H01L21/324 ,  H01L21/6838

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.