公开(公告)号：US20080191834A1

公开(公告)日：2008-08-14

申请号：US11704987

申请日：2007-02-12

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

IPC: H01C7/12 ,  C03C11/00

CPC classification number: H01C7/105 ,  B82Y30/00 ,  C03C14/006 ,  C03C2214/05 ,  C03C2214/08 ,  C03C2214/16 ,  C04B35/453 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/565 ,  C04B35/624 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/62886 ,  C04B2235/3275 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/36 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6025 ,  H01C7/12

Abstract: A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.

Abstract translation: 低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端 主体和内部电极; 陶瓷主体包括3〜50重量％的无机玻璃和50〜97重量％的粒径大于0.1微米的半导体或导电颗粒，无机玻璃膜层覆盖半导体或 导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。

公开(公告)号：US07724124B2

公开(公告)日：2010-05-25

申请号：US11704987

申请日：2007-02-12

Applicant: Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

Inventor： Ching-Hohn Lien ,  Cheng-Tsung Kuo ,  Jun-Nun Lin ,  Jie-An Zhu ,  Li-Yun Zhang ,  Xing-Guang Huang ,  Wei-Cheng Lien

IPC: H01C7/10

CPC classification number: H01C7/105 ,  B82Y30/00 ,  C03C14/006 ,  C03C2214/05 ,  C03C2214/08 ,  C03C2214/16 ,  C04B35/453 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/565 ,  C04B35/624 ,  C04B35/62805 ,  C04B35/62807 ,  C04B35/62886 ,  C04B2235/3275 ,  C04B2235/3284 ,  C04B2235/3298 ,  C04B2235/36 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6025 ,  H01C7/12

Abstract: A low-capacitance multilayer chip varistor has capacitance lower than 0.5 pF at 1 MHz and has a characteristic of resisting more than thousands of times of 8 KV electrostatic shock, which comprises a ceramic main body, outer electrodes disposed at two ends of the ceramic main body and inner electrodes disposed therein; the ceramic main body comprises inorganic glass of 3˜50 wt % and semi-conductive or conductive particles of 50˜97 wt % with particle size of more than 0.1 μm, and a layer of inorganic glass film covers the surface of semi-conductive or conductive particles, wherein the inorganic glass film contains semi-conductive or conductive particles of submicron or nanometer which is smaller than 1 micron, and the quantity contained of semi-conductive or conductive particles is less than 20 wt % of that of inorganic glass.

Abstract translation: 低容量多层片式压敏电阻在1MHz时的电容低于0.5pF，具有耐8千伏静电电击的数千倍的特性，其中包括一陶瓷主体，外电极位于陶瓷主体的两端 主体和内部电极; 陶瓷主体包含3〜50重量％的无机玻璃和粒径大于0.1μm的50〜97重量％的半导电性或导电性粒子，无机玻璃膜层覆盖半导电性或 导电颗粒，其中无机玻璃膜含有小于1微米的亚微米或纳米的半导电或导电颗粒，并且半导体或导电颗粒所含的量小于无机玻璃的20重量％。