公开(公告)号：US08652868B2

公开(公告)日：2014-02-18

申请号：US13410165

申请日：2012-03-01

申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

公开(公告)号：US20130230941A1

公开(公告)日：2013-09-05

申请号：US13410165

申请日：2012-03-01

申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。