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11 条记录 (耗时 0.03 秒)

    Implanting Method for Forming Photodiode
    1.
    发明申请
    Implanting Method for Forming Photodiode 有权
    用于形成光电二极管的植入方法

    公开(公告)号：US20130230941A1

    公开(公告)日：2013-09-05

    申请号：US13410165

    申请日：2012-03-01

    申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    IPC分类号： H01L31/18

    CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

    摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

    摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

    Implanting method for forming photodiode
    2.
    发明授权
    Implanting method for forming photodiode 有权
    用于形成光电二极管的植入方法

    公开(公告)号：US08652868B2

    公开(公告)日：2014-02-18

    申请号：US13410165

    申请日：2012-03-01

    申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    IPC分类号： H01L21/00

    CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

    摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

    摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

    Copper plating of semiconductor devices using single intermediate low power immersion step
    9.
    发明授权
    Copper plating of semiconductor devices using single intermediate low power immersion step 有权
    采用单中级低功耗浸入式半导体器件镀铜

    公开(公告)号：US07312149B2

    公开(公告)日：2007-12-25

    申请号：US10840095

    申请日：2004-05-06

    申请人： Chao-Lung Chen ,  Kei-Wei Chen ,  Shih-Ho Lin ,  Ying-Lang Wang ,  Yu-Ku Lin ,  Ching-Hwanq Su ,  Po-Jen Shih ,  Shang-Chin Sung

    发明人： Chao-Lung Chen ,  Kei-Wei Chen ,  Shih-Ho Lin ,  Ying-Lang Wang ,  Yu-Ku Lin ,  Ching-Hwanq Su ,  Po-Jen Shih ,  Shang-Chin Sung

    IPC分类号： H01L21/44

    CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D5/10 ,  C25D5/18 ,  H01L21/2885

    摘要： A method of electroplating a metal layer on a semiconductor device includes a sequence of biasing operations that includes a first electroplating step at a first current density followed by a second immersion step at a second current density being less than the first current density, and subsequent electroplating steps of increasing current densities beginning with a third electroplating step having a third current density that is greater than the first current density. The second, low current density immersion step improves the quality of the plating process and produces a plated film that completely fills openings such as vias and trenches and avoids hollow vias and pull-back on the bottom corners of via and trench openings. The low current density second immersion step produces an electrochemical deposition process that provides low contact resistance and therefore reduces device failure.

    摘要翻译： 在半导体器件上电镀金属层的方法包括一系列偏置操作，其包括第一电流密度的第一电镀步骤，随后是第二电流密度小于第一电流密度的第二浸入步骤，随后的电镀 从具有大于第一电流密度的第三电流密度的第三电镀步骤开始增加电流密度的步骤。 第二，低电流密度浸没步骤提高了电镀工艺的质量，并且产生完全填充诸如通孔和沟槽等开口的电镀膜，并避免了通孔和沟槽开口的底角上的中空通孔和拉回。 低电流密度第二浸入步骤产生电化学沉积工艺，其提供低接触电阻并因此减少器件故障。

    Low temperature method for metal deposition
    10.
    发明授权
    Low temperature method for metal deposition 有权
    金属沉积低温法

    公开(公告)号：US07176081B2

    公开(公告)日：2007-02-13

    申请号：US10851044

    申请日：2004-05-20

    申请人： Chih-Fu Chang ,  Yen-Hsiu Chen ,  Hung-Jen Lin ,  Ming-Chu King ,  Ching-Hwanq Su ,  Chih-Mu Huang ,  Yun Chang

    发明人： Chih-Fu Chang ,  Yen-Hsiu Chen ,  Hung-Jen Lin ,  Ming-Chu King ,  Ching-Hwanq Su ,  Chih-Mu Huang ,  Yun Chang

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/2855 ,  H01L21/32051 ,  H01L28/60

    摘要： A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.

    摘要翻译： 公开了一种适用于在金属 - 绝缘体 - 金属（MIM）电容器的制造中在基底上沉积金属膜的新颖的低温金属沉积方法。 该方法包括使用小于一般约270℃的沉积温度在基板上沉积金属膜。所得到的金属膜的特征在于增强的厚度均匀性和减小的晶粒聚集，否则倾向于降低电容器或其它的操作完整性 金属膜是其一部分的装置。 此外，金属膜的特征在于本征击穿电压（V BAT）改善。