Optical device wafer processing method
    1.
    发明授权
    Optical device wafer processing method 有权
    光器件晶圆加工方法

    公开(公告)号:US08409969B2

    公开(公告)日:2013-04-02

    申请号:US13223851

    申请日:2011-09-01

    申请人: Yohei Gokita

    发明人: Yohei Gokita

    IPC分类号: H01L21/78

    摘要: An optical device wafer has a device area where a plurality of optical devices are formed on the front side of a sapphire substrate, and a peripheral marginal area surrounding the device area. The device area projects from the peripheral marginal area. A break start point is formed on the front side of the sapphire substrate by applying a laser beam along the boundary between the device area and the peripheral marginal area. A protective member is attached to the front side of the optical device wafer. The optical device wafer is held on a chuck table of a grinding apparatus so that the protective member comes into contact with a holding surface of the chuck table. The back side of the sapphire substrate is ground to reduce the thickness thereof to a predetermined thickness.

    摘要翻译: 光学器件晶片具有在蓝宝石衬底的正面上形成多个光学器件的器件区域和围绕器件区域的周边边缘区域。 设备区域从周边边缘地区投资。 通过沿着器件区域和周边边缘区域之间的边界施加激光束,在蓝宝石衬底的前侧形成断裂起点。 保护构件附接到光学装置晶片的前侧。 光学器件晶片被保持在研磨装置的卡盘台上,使得保护构件与卡盘台的保持表面接触。 将蓝宝石基板的背面研磨以将其厚度减小到预定厚度。

    OPTICAL DEVICE WAFER PROCESSING METHOD
    2.
    发明申请
    OPTICAL DEVICE WAFER PROCESSING METHOD 有权
    光学器件波形处理方法

    公开(公告)号:US20120061010A1

    公开(公告)日:2012-03-15

    申请号:US13223851

    申请日:2011-09-01

    申请人: Yohei Gokita

    发明人: Yohei Gokita

    IPC分类号: B32B38/10

    摘要: An optical device wafer has a device area where a plurality of optical devices are formed on the front side of a sapphire substrate, and a peripheral marginal area surrounding the device area. The device area projects from the peripheral marginal area. A break start point is formed on the front side of the sapphire substrate by applying a laser beam along the boundary between the device area and the peripheral marginal area. A protective member is attached to the front side of the optical device wafer. The optical device wafer is held on a chuck table of a grinding apparatus so that the protective member comes into contact with a holding surface of the chuck table. The back side of the sapphire substrate is ground to reduce the thickness thereof to a predetermined thickness.

    摘要翻译: 光学器件晶片具有在蓝宝石衬底的正面上形成多个光学器件的器件区域和围绕器件区域的周边边缘区域。 设备区域从周边边缘地区投资。 通过沿着器件区域和周边边缘区域之间的边界施加激光束,在蓝宝石衬底的前侧形成断裂起点。 保护构件附接到光学装置晶片的前侧。 光学器件晶片被保持在研磨装置的卡盘台上,使得保护构件与卡盘台的保持表面接触。 将蓝宝石基板的背面研磨以将其厚度减小到预定厚度。

    WAFER PROCESSING METHOD
    3.
    发明申请
    WAFER PROCESSING METHOD 审中-公开
    WAFER加工方法

    公开(公告)号:US20110097875A1

    公开(公告)日:2011-04-28

    申请号:US12909078

    申请日:2010-10-21

    IPC分类号: H01L21/78

    CPC分类号: H01L21/78

    摘要: A wafer processing method for dividing a wafer into individual devices along a plurality of crossing streets formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the streets. The wafer processing method includes the steps of attaching the front side of the wafer to a dicing tape supported to an annular dicing frame, grinding the back side of the wafer to reduce the thickness of the wafer to a predetermined thickness, forming a break start point along each street from the back side of the wafer, applying an external force to the wafer to break the wafer along each street where the break start point is formed, thereby dividing the wafer into the individual devices, attaching the back side of the wafer to a front side of an adhesive tape supported to an annular frame and next removing the adhesive tape from the front side of the adhesive tape, and peeling off and picking up each device from the adhesive tape.

    摘要翻译: 一种晶片处理方法,用于沿着形成在晶片的前侧上的多个交叉街道将晶片分割为各个装置,各个装置分别形成在由街道分隔开的多个区域中。 晶片处理方法包括以下步骤:将晶片的前侧附接到支撑在环形切割框架上的切割带,研磨晶片的背面以将晶片厚度减小到预定厚度,形成断点起点 沿着从晶片的背面的每个街道,向晶片施加外力,以沿着形成断裂起点的每个街道破碎晶片,从而将晶片分成各个装置,将晶片的背面附着到 将胶带的前侧支撑在环形框架上,然后从胶带的前侧去除胶带,并从胶带上剥离和拾取每个装置。