摘要:
A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio.
摘要:
A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio.
摘要:
Provided are methods of forming semiconductor devices. A method may include preparing a semiconductor substrate including a first region and a second region adjacent the first region. The method may also include forming sacrificial pattern covering the second region and exposing the first region. The method may further include forming a capping layer including a faceted sidewall on the first region using selective epitaxial growth (SEG). The faceted sidewall may be separate from the sacrificial pattern. The sacrificial pattern may be removed. Impurity ions may be implanted into the semiconductor substrate.
摘要:
A display apparatus and a power supplying method are provided. The display apparatus includes a signal receiver which receives a video signal; a signal processor which processes the video signal; a display unit which displays an image based on a video signal processed by the signal processor; and a power supply which converts an alternating current (AC) voltage into a direct current (DC) voltage and supplies an operation voltage to the display unit, the power supply including: a power factor correction (PFC) unit which adjusts the DC voltage and corrects a power factor of the power supply; a detector which detects a plurality of voltages in the power supply and outputs a common detection signal indicating whether at least one of the plurality of voltages is abnormal; and a controller which receives the common detection signal, and controls the PFC unit based on the common detection signal.
摘要:
A display apparatus and a control method thereof are disclosed. The display apparatus includes a signal processor which processes a video signal; a display which displays an image based on the video signal processed by the signal processor, a light source providing light for displaying the image; and a driving circuit which drives the light source on the basis of a dimming signal having an on-section and an off-section for dimming the light source. The driving circuit includes a protection circuit for performing a protection operation as a result of an abnormal electric current flowing in the light source during the off-section. The display apparatus is protected when a short circuit occurs between the light source and the driving circuit, thereby enhancing the stability and reliability of the apparatus.