公开(公告)号：US20050254310A1

公开(公告)日：2005-11-17

申请号：US11120499

申请日：2005-05-03

申请人： Jae Lee ,  De Fu ,  Tae Kang ,  Seung Lee ,  Yoo Heo ,  Dae Kim ,  Ju Lee ,  Dong Lee

发明人： Jae Lee ,  De Fu ,  Tae Kang ,  Seung Lee ,  Yoo Heo ,  Dae Kim ,  Ju Lee ,  Dong Lee

IPC分类号： H01L27/105 ,  G11C5/00 ,  G11C11/22

CPC分类号： G11C11/22

摘要： Provided are a nonvolatile semiconductor memory device including ferroelectric semiconductor patterns in respective memory cells and methods of writing and reading data. The device includes a substrate; a plurality of first conductive lines disposed in or on the substrate; a plurality of second conductive lines disposed in or on the substrate and having a different height from the first conductive lines, wherein the second conductive lines intersect the first conductive lines, respectively, to define a plurality of intersection regions; and a plurality of memory cells disposed on the substrate. Herein, the memory cells include ferroelectric semiconductor patterns, respectively, which are disposed between the first conductive lines and the second conductive lines that define the intersection regions.

摘要翻译： 提供了在各个存储单元中包括铁电半导体图案的非易失性半导体存储器件以及写入和读取数据的方法。 该装置包括基板; 设置在所述基板中或所述基板上的多个第一导线; 多个第二导电线设置在基板中或基板上，并且具有与第一导线不同的高度，其中第二导线分别与第一导线相交以限定多个交叉区域; 以及设置在基板上的多个存储单元。 这里，存储单元包括分别设置在限定交叉区域的第一导线和第二导线之间的铁电半导体图案。