公开(公告)号：US4340186A

公开(公告)日：1982-07-20

申请号：US96480

申请日：1979-11-21

申请人： Sachio Shimada ,  Yoshiaki Ohwada

发明人： Sachio Shimada ,  Yoshiaki Ohwada

IPC分类号： B65H54/00 ,  B65H54/02 ,  B65H54/10 ,  B65H54/28 ,  H01F41/06 ,  H02K15/095 ,  H02K15/09

CPC分类号： H02K15/095 ,  B65H54/10 ,  B65H54/2896 ,  H01F41/088

摘要： A flyer-type winding machine includes a forming apparatus which is linearly reciprocated with respect to an axis of a bobbin, coil form or core on which a filament is to be wound while the filament is paid out from a flyer which rotates or orbits thereabout. The forming apparatus guides the filament to the bobbin, coil form or core. Moveable pins are synchronized with orbiting of the flyer to cooperate with the forming apparatus in intermittently catching and releasing the filament so as to control the positions at which portions of each turn of the filament are laid down on the bobbin, coil form or core.

摘要翻译： 传单式绕线机包括一个成形装置，该成形装置相对于绕线筒，线圈形式或芯线的线轴线线性地往复运动，在其上缠绕细丝，同时从转动或绕其旋转的飞翼支付细丝。 成形装置将丝线引导到线轴，线圈形式或芯部。 可移动的销与传单的轨道同步，以与成形装置配合以间歇地捕获和释放灯丝，以便控制灯丝的每个转弯的部分放置在线轴，线圈形式或芯上的位置。

公开(公告)号：US4862000A

公开(公告)日：1989-08-29

申请号：US15039

申请日：1987-02-17

申请人： Atsuko Kubota ,  Yoshiaki Matsushita ,  Yoshiaki Ohwada

发明人： Atsuko Kubota ,  Yoshiaki Matsushita ,  Yoshiaki Ohwada

IPC分类号： B60R25/04 ,  B60R25/23 ,  B60R25/24 ,  G01N21/95

CPC分类号： G01N21/3563 ,  G01N21/9505 ,  G01N2021/3568 ,  G01N2021/3595 ,  G01N21/95

摘要： In a method for predicting a density of micro crystal defects to be generated in a semiconductor element, an infrared absorption spectrum associated with a silicon wafer, which is used for the manufacture of the semiconductor element, is formed by a spectrum forming system. The spectrum has a first oxygen absorption peak at the wavenumber range of 1150 to 1050 cm.sup.-1 and a second oxygen absorption peak at 530 to 500 cm.sup.-1. First and second coefficients indicating oxygen concentrations at the first and second peaks are read by a reading unit. The density of the micro crystal defects are predicted by using a ratio of the first and second coefficients as a monitor.

摘要翻译： 在用于预测在半导体元件中产生的微晶缺陷的密度的方法中，通过光谱形成系统形成用于制造半导体元件的与硅晶片相关联的红外吸收光谱。 光谱在1150至1050cm -1的波数范围具有第一氧吸收峰，在530至500cm -1处具有第二氧吸收峰。 通过读取单元读取表示第一和第二峰值处的氧浓度的第一和第二系数。 通过使用第一和第二系数的比率作为监视器来预测微晶缺陷的密度。

公开(公告)号：US4638552A

公开(公告)日：1987-01-27

申请号：US701516

申请日：1985-02-14

申请人： Masaru Shimbo ,  Kiyoshi Fukuda ,  Yoshiaki Ohwada

发明人： Masaru Shimbo ,  Kiyoshi Fukuda ,  Yoshiaki Ohwada

IPC分类号： H01L21/18 ,  H01L21/20 ,  H01L21/304 ,  H01L21/74 ,  H01L21/762 ,  H01L21/302 ,  H01L21/76

CPC分类号： H01L21/2007 ,  H01L21/187 ,  H01L21/304 ,  H01L21/74 ,  H01L21/76251 ,  Y10S148/012 ,  Y10S148/159

摘要： A method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates, forming a modified layer on at least one of the polished surfaces of the first and second semiconductor plates, and bonding the polished surfaces of the first and second semiconductor plates with each other in a clean atmosphere.

摘要翻译： 制造其中具有改性层的半导体衬底的方法包括以下步骤：对第一和第二半导体板中的每一个的一个表面进行镜面抛光，在第一和第二半导体板的至少一个抛光表面上形成改性层， 并且在清洁的气氛中将第一和第二半导体板的抛光表面彼此接合。