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    Method And Apparatus For Mapping Distribution of Chemical Compounds in Soil
    2.
    发明公开
    Method And Apparatus For Mapping Distribution of Chemical Compounds in Soil 审中-公开

    公开(公告)号：US20240337596A1

    公开(公告)日：2024-10-10

    申请号：US18749755

    申请日：2024-06-21

    申请人： S4 Mobile Laboratories, LLC

    发明人： Linda BARRETT

    IPC分类号： G01N21/3563 ,  G01N21/359 ,  G01N21/85 ,  G01N33/24 ,  G01S19/26

    CPC分类号： G01N21/3563 ,  G01N21/359 ,  G01N21/8507 ,  G01N33/24 ,  G01S19/26 ,  G01N2021/855 ,  G01N2201/0636 ,  G01N2201/0638 ,  G01N2201/08

    摘要： A method for mapping distribution of chemical compounds in soil is described herein including inserting a probe into the soil, obtaining spectroscopic data regarding the soil, sampling a core of soil adjacent to the probe locations, dividing the core into multiple depth increments, analyzing the core samples, matching each core sample with a corresponding depth increment of the probe insertions, obtaining data from the probe insertions, dividing the probe insertion data into training, validation, and test categories, resampling spectral variables from the probe insertion data to a wavelength interval longer than a native wavelength interval of an associated spectrometer, normalizing the probe insertion data on a spectrum by spectrum basis, utilizing a machine learning normalization algorithm, standardizing the spectral variables to a common scale by removing a mean and scaling to unit variance, and choosing a model utilizing the test set.

    METHOD AND APPARATUS FOR DETERMINING A FORCE APPLIED TO A SAMPLE DURING AN OPTICAL INTERROGATION TECHNIQUE
    4.
    发明公开
    METHOD AND APPARATUS FOR DETERMINING A FORCE APPLIED TO A SAMPLE DURING AN OPTICAL INTERROGATION TECHNIQUE 审中-公开

    公开(公告)号：US20240310277A1

    公开(公告)日：2024-09-19

    申请号：US18668978

    申请日：2024-05-20

    申请人： Thermo Electron Scientific Instruments LLC

    发明人： William Robert KEEFE ,  Gang FENG ,  Min YAN ,  William BAYER ,  Peter STEINBERG

    IPC分类号： G01N21/3563 ,  G01L1/22

    CPC分类号： G01N21/3563 ,  G01L1/22 ,  G01N2201/0634

    摘要： An optical measurement system measurement system for examining a sample. The measurement system comprises an internally reflective element, a stage, an optical assembly, a chassis, and a sensor. The internally reflective element has a contact surface. The stage is positioned below the internally reflective element. The stage and the internally reflective element are configured to apply a force to the sample. The optical assembly comprises a light source and a light detector. The optical assembly is configured to scan the sample by directing source light from the light source towards the contact surface and detecting source light optically interacting with the contact surface by the light detector. The chassis is configured to support the optical assembly and the internally reflective element. The sensor is mounted to the chassis and configured to detect the force applied to the sample by the internally reflective element and the stage.

    Systems and methods of characterizing semiconductor materials
    5.
    发明授权
    Systems and methods of characterizing semiconductor materials 有权

    公开(公告)号：US12085516B2

    公开(公告)日：2024-09-10

    申请号：US17781020

    申请日：2020-12-04

    申请人： AURORA SOLAR TECHNOLOGIES (Canada) Inc.

    发明人： Hamidreza Ghoddami ,  Johnson Kai Chi Wong ,  Gordon Deans

    IPC分类号： G01N21/95 ,  G01N21/35 ,  G01N21/3563 ,  G01N21/59

    CPC分类号： G01N21/9501 ,  G01N21/3563 ,  G01N21/59 ,  G01N2021/3568 ,  G01N2021/3595

    摘要： Systems and methods for non-contact characterization of semiconductor devices. Systems may include: an infrared radiation source directing radiation towards the semiconductor device; a radiation directing device positioned proximal the infrared radiation source to direct radiation towards an opposing side of the semiconductor device, the semiconductor device receivable between the radiation directing device and the infrared radiation source; and a radiation detector proximal to the infrared radiation source to sense radiation associated with a plurality of infrared wavebands from the semiconductor device for determining a dopant profile property of the semiconductor device. The sensed radiation may include radiation originating from the infrared radiation source reflected from the semiconductor device. The sensed radiation may include radiation originating from the radiation directing device and emerging from the semiconductor device. The dopant profile properties may be based on infrared reflectance or infrared transmittance associated with the plurality of respective infrared wavebands.