摘要:
An organic EL panel comprises anodes, a cathode, organic light-emitting layers, and first functional layers each including a hole injection layer and a hole transport layer. The hole injection layer of each of the R, G, and B colors is made of only a metal oxide including tungsten oxide, and has a thickness of 5 nm to 40 nm. At least one of the hole injection layers has a thickness different from the other hole injection layers. The hole transport layers of the R, G, and B colors are equivalent in thickness. The organic light-emitting layers of the R, G, and B colors are equivalent in thickness.
摘要:
An organic EL panel comprises anodes, a cathode, organic light-emitting layers, and first functional layers each including a hole injection layer and a hole transport layer. The hole injection layer of each of the R, G, and B colors is made of only a metal oxide including tungsten oxide, and has a thickness of 5 nm to 40 nm. At least one of the hole injection layers has a thickness different from the other hole injection layers. The hole transport layers of the R, G, and B colors are equivalent in thickness. The organic light-emitting layers of the R, G, and B colors are equivalent in thickness.
摘要:
An organic light-emitting element includes an anode, a functional layer, and a hole injection layer between the anode and the functional layer. The functional layer contains an organic material. The hole injection layer injects holes to the functional layer. The hole injection layer comprises tungsten oxide and includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of binding energy.
摘要:
An organic light-emitting element includes an anode, a functional layer, and a hole injection layer between the anode and the functional layer. The functional layer contains an organic material. The hole injection layer injects holes to the functional layer. The hole injection layer comprises tungsten oxide and includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of binding energy.