Method for producing transparent conductive film
    1.
    发明授权
    Method for producing transparent conductive film 有权
    透明导电膜的制造方法

    公开(公告)号:US08580088B2

    公开(公告)日:2013-11-12

    申请号:US13280758

    申请日:2011-10-25

    IPC分类号: C23C14/34

    摘要: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.

    摘要翻译: 一种透明导电膜的制造方法,所述透明导电膜包括透明膜基板和结晶透明导电层,其包括:在所述透明膜基板上首先沉积具有第一四价金属元素氧化物的第一铟基复合氧化物; 以及第二沉积铟氧化物或第二铟基复合氧化物,并且低于用于首先通过溅射沉积形成非晶透明导电层的铟基复合氧化物的四价金属元素氧化物含量,并且使无定形透明 导电层。 该方法允许降低结晶时间。

    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM
    6.
    发明申请
    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 有权
    生产透明导电薄膜的方法

    公开(公告)号:US20120111718A1

    公开(公告)日:2012-05-10

    申请号:US13280758

    申请日:2011-10-25

    IPC分类号: C23C14/34

    摘要: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.

    摘要翻译: 一种透明导电膜的制造方法,所述透明导电膜包括透明膜基板和结晶透明导电层,其包括:在所述透明膜基板上首先沉积具有第一四价金属元素氧化物的第一铟基复合氧化物; 以及第二沉积铟氧化物或第二铟基复合氧化物,并且低于用于首先通过溅射沉积形成非晶透明导电层的铟基复合氧化物的四价金属元素氧化物含量,并且使无定形透明 导电层。 该方法允许降低结晶时间。