TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL
    2.
    发明申请
    TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL 失效
    透明导电膜和触控面板

    公开(公告)号:US20090029151A1

    公开(公告)日:2009-01-29

    申请号:US11993929

    申请日:2007-01-12

    IPC分类号: B32B5/16 B32B27/00

    摘要: A transparent conductive film of the present invention comprises: a transparent film substrate; a hard-coating layer provided on one side of the transparent film substrate; and a transparent conductive thin layer provided on another side of the transparent film substrate, wherein the hard-coating layer is made from a material containing a urethane acrylate, a polyol (meth)acrylate and a (meth)acrylic polymer having an alkyl group containing two or more hydroxyl groups. The transparent conductive film of the present invention has good scratch resistance.

    摘要翻译: 本发明的透明导电膜包括:透明膜基板; 设置在所述透明膜基板一侧的硬涂层; 以及设置在所述透明膜基板的另一侧的透明导电薄层,其中,所述硬涂层由含有氨基甲酸酯丙烯酸酯,多元醇(甲基)丙烯酸酯和(甲基)丙烯酸烷基酯的(甲基)丙烯酸系聚合物构成的材料 两个或多个羟基。 本发明的透明导电膜具有良好的耐擦伤性。

    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM
    4.
    发明申请
    METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 有权
    生产透明导电薄膜的方法

    公开(公告)号:US20120111718A1

    公开(公告)日:2012-05-10

    申请号:US13280758

    申请日:2011-10-25

    IPC分类号: C23C14/34

    摘要: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.

    摘要翻译: 一种透明导电膜的制造方法,所述透明导电膜包括透明膜基板和结晶透明导电层,其包括:在所述透明膜基板上首先沉积具有第一四价金属元素氧化物的第一铟基复合氧化物; 以及第二沉积铟氧化物或第二铟基复合氧化物,并且低于用于首先通过溅射沉积形成非晶透明导电层的铟基复合氧化物的四价金属元素氧化物含量,并且使无定形透明 导电层。 该方法允许降低结晶时间。

    TRANSPARENT CRYSTALLINE ELECTRICALLY-CONDUCTIVE THIN FILM, METHOD OF PRODUCTION THEREOF, TRANSPARENT ELECTRICALLY-CONDUCTIVE FILM, AND TOUCH PANEL
    5.
    发明申请
    TRANSPARENT CRYSTALLINE ELECTRICALLY-CONDUCTIVE THIN FILM, METHOD OF PRODUCTION THEREOF, TRANSPARENT ELECTRICALLY-CONDUCTIVE FILM, AND TOUCH PANEL 有权
    透明晶体导电薄膜,其生产方法,透明导电薄膜和触控面板

    公开(公告)号:US20090117405A1

    公开(公告)日:2009-05-07

    申请号:US11917110

    申请日:2006-12-27

    IPC分类号: B32B9/00 B05D5/12 H01B1/02

    CPC分类号: C23C14/086

    摘要: A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.

    摘要翻译: 本发明的透明结晶性导电性薄膜,以铟锡氧化物为主要成分,其中,所述氧化铟锡含有氧化铟和氧化锡总量的9重量%以下,其中, 透明结晶性导电性薄膜含有0.45原子%以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。

    Transparent laminate, pen-input image display, and image display method
    6.
    发明申请
    Transparent laminate, pen-input image display, and image display method 审中-公开
    透明层压板,笔式输入图像显示和图像显示方法

    公开(公告)号:US20050237307A1

    公开(公告)日:2005-10-27

    申请号:US10519800

    申请日:2004-02-05

    CPC分类号: G06F3/0488 G06F3/041

    摘要: A surface-treated film, a transparent rigid layer and a transparent relaxing layer are laminated in this order to form a transparent laminate. Particularly, the transparent relaxing layer is made of an adhesive. The dynamic storage modulus G′ of the transparent rigid layer at 20° C. is not lower than 2×108 Pa. On the other hand, the dynamic storage modulus G′ of the transparent relaxing layer at 20° C. is not higher than 1×107 Pa. The transparent laminate is directly laminated onto a visual surface side (pen-input side) of a liquid crystal panel provided as an image display panel so that the transparent relaxing layer is placed inward. Thus, a pen-input image display device is produced.

    摘要翻译: 依次层叠表面处理膜,透明刚性层和透明缓和层,形成透明层叠体。 特别地,透明缓和层由粘合剂制成。 透明刚性层在20℃下的动态储能模量G'不低于2×10 8 Pa。 另一方面,透明缓和层在20℃下的动态储能模量G'不高于1×10 7 Pa。 将透明层叠体直接层压到设置为图像显示面板的液晶面板的视觉表面侧(笔式输入侧),使透明缓冲层向内侧放置。 因此,制作笔输入图像显示装置。

    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel
    7.
    发明授权
    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel 有权
    透明结晶导电薄膜,其制造方法,透明导电膜和触摸面板

    公开(公告)号:US09260777B2

    公开(公告)日:2016-02-16

    申请号:US11917110

    申请日:2006-12-27

    IPC分类号: C23C16/00 C23C14/08

    CPC分类号: C23C14/086

    摘要: A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.

    摘要翻译: 本发明的透明结晶性导电性薄膜,以铟锡氧化物为主要成分,其中,所述氧化铟锡含有氧化铟和氧化锡总量的9重量%以下,其中, 透明结晶性导电性薄膜含有0.45原子%以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。

    NONVOLATILE SEMICONDCUTOR MEMORY DEVICE, IC CARD AND PORTABLE APPARATUS
    8.
    发明申请
    NONVOLATILE SEMICONDCUTOR MEMORY DEVICE, IC CARD AND PORTABLE APPARATUS 审中-公开
    非易失性半导体存储器件,IC卡和便携式设备

    公开(公告)号:US20120243319A1

    公开(公告)日:2012-09-27

    申请号:US13229949

    申请日:2011-09-12

    IPC分类号: G11C16/30

    摘要: According to one embodiment, a nonvolatile semiconductor memory device includes a first nonvolatile memory, and a voltage generation circuit configured to apply a voltage to the first nonvolatile memory, the voltage generation circuit includes a charge pump and an oscillator configured to generate a clock to be used to operate the charge pump. The voltage generation circuit changes a frequency of the clock.

    摘要翻译: 根据一个实施例,非易失性半导体存储器件包括第一非易失性存储器和被配置为向第一非易失性存储器施加电压的电压产生电路,电压产生电路包括电荷泵和振荡器,其被配置为产生时钟 用于操作电荷泵。 电压产生电路改变时钟的频率。