摘要:
A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.
摘要:
A transparent conductive film of the present invention comprises: a transparent film substrate; a hard-coating layer provided on one side of the transparent film substrate; and a transparent conductive thin layer provided on another side of the transparent film substrate, wherein the hard-coating layer is made from a material containing a urethane acrylate, a polyol (meth)acrylate and a (meth)acrylic polymer having an alkyl group containing two or more hydroxyl groups. The transparent conductive film of the present invention has good scratch resistance.
摘要:
A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.
摘要:
A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.
摘要:
A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
摘要:
A surface-treated film, a transparent rigid layer and a transparent relaxing layer are laminated in this order to form a transparent laminate. Particularly, the transparent relaxing layer is made of an adhesive. The dynamic storage modulus G′ of the transparent rigid layer at 20° C. is not lower than 2×108 Pa. On the other hand, the dynamic storage modulus G′ of the transparent relaxing layer at 20° C. is not higher than 1×107 Pa. The transparent laminate is directly laminated onto a visual surface side (pen-input side) of a liquid crystal panel provided as an image display panel so that the transparent relaxing layer is placed inward. Thus, a pen-input image display device is produced.
摘要:
A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a first nonvolatile memory, and a voltage generation circuit configured to apply a voltage to the first nonvolatile memory, the voltage generation circuit includes a charge pump and an oscillator configured to generate a clock to be used to operate the charge pump. The voltage generation circuit changes a frequency of the clock.
摘要:
A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要:
An impact-absorbing pressure-sensitive adhesive sheet according to an embodiment of the present invention includes an impact-absorbing pressure-sensitive adhesive layer including an impact-absorbing layer. A side surface of the impact-absorbing pressure-sensitive adhesive layer includes a tapered surface; and the tapered surface has a taper angle of 65° or more.