公开(公告)号：US08268075B2

公开(公告)日：2012-09-18

申请号：US12305802

申请日：2007-06-22

申请人： Koji Omichi ,  Yoshikazu Kaifuchi ,  Munehisa Fujimaki ,  Akihiko Yoshikawa

发明人： Koji Omichi ,  Yoshikazu Kaifuchi ,  Munehisa Fujimaki ,  Akihiko Yoshikawa

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C23C14/086 ,  C23C14/46 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631

摘要： A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.

摘要翻译： 一种氧化锌系半导体晶体的制造方法，其特征在于，包括：在基板的表面上至少引入锌和氧; 以及在衬底上生长氧化锌基半导体晶体，其中锌的全部或部分部分在1×10 -4乇或更小的真空气氛中离子化，并被引入衬底的表面以使ZnO 基于半导体晶体。 结果，可以提供一种能够生长具有优异的表面平坦度和结晶度并且以高生长速率包含极少量的杂质的氧化锌半导体晶体的氧化锌基半导体晶体的制造方法。

公开(公告)号：US20090260563A1

公开(公告)日：2009-10-22

申请号：US12305802

申请日：2007-06-22

申请人： Koji Omichi ,  Yoshikazu Kaifuchi ,  Munehisa Fujimaki ,  Akihiko Yoshikawa

发明人： Koji Omichi ,  Yoshikazu Kaifuchi ,  Munehisa Fujimaki ,  Akihiko Yoshikawa

IPC分类号： H01L21/322 ,  C30B23/00

CPC分类号： C23C14/086 ,  C23C14/46 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631

摘要： A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10−4 Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.

摘要翻译： 一种氧化锌系半导体晶体的制造方法，其特征在于，包括：在基板的表面上至少引入锌和氧; 以及在衬底上生长氧化锌基半导体晶体，其中锌的全部或部分部分在1×10 -4 Torr或更小的真空气氛中离子化，并被引入衬底的表面以生长ZnO基半导体 水晶。 结果，可以提供一种能够生长具有优异的表面平坦度和结晶度并且以高生长速率包含极少量的杂质的氧化锌半导体晶体的氧化锌基半导体晶体的制造方法。