公开(公告)号：US20090166780A1

公开(公告)日：2009-07-02

申请号：US12394402

申请日：2009-02-27

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L31/0236 ,  H01L21/306

CPC分类号： C30B33/10 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof, and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地制造具有优异的光电转换效率的半导体衬底的方法，其中可以在半导体衬底的表面上均匀地形成适合于太阳能电池的精细不均匀结构以期望的尺寸; 用于太阳能应用的半导体衬底，其均匀且精细的棱锥形不均匀结构在其表面内均匀地提供，以及用于形成具有均匀和细微不均匀结构的半导体衬底的蚀刻溶液。 使用碱性蚀刻溶液蚀刻半导体衬底，所述碱蚀刻溶液含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸及其盐，至少一种， 从而在半导体衬底的表面上形成不均匀的结构。

公开(公告)号：US20080048279A1

公开(公告)日：2008-02-28

申请号：US11577351

申请日：2005-10-26

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L21/306 ,  C09K13/02 ,  H01L31/00

CPC分类号： C30B33/10 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地制造具有优异的光电转换效率的半导体衬底的方法，其中可以在半导体衬底的表面上均匀地形成适合于太阳能电池的精细不均匀结构以期望的尺寸; 用于太阳能应用的半导体衬底，其均匀且精细的棱锥形不均匀结构在其表面内均匀地设置; 以及用于形成均匀且细微的凹凸结构的半导体衬底的蚀刻溶液。 使用碱性蚀刻溶液蚀刻半导体衬底，所述碱蚀刻溶液含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸及其盐，至少一种， 从而在半导体衬底的表面上形成不均匀的结构。

公开(公告)号：US5103869A

公开(公告)日：1992-04-14

申请号：US592742

申请日：1990-10-04

申请人： Yoshimichi Kimura ,  Yuzo Kimoto ,  Yukio Sato ,  Yukio Anekoji ,  Osamu Yabuta ,  Mitsuhisa Fukuda ,  Shoji Hirose ,  Takao Chiba

发明人： Yoshimichi Kimura ,  Yuzo Kimoto ,  Yukio Sato ,  Yukio Anekoji ,  Osamu Yabuta ,  Mitsuhisa Fukuda ,  Shoji Hirose ,  Takao Chiba

IPC分类号： F24F13/12

CPC分类号： F24F13/12 ,  Y10T137/86718

摘要： A piezoelectric on-off value for air conditioning comprises a bendable metal plate fixed at one end thereof; a valve member mounted on the other end of the metal plate along a ceiling plate, the value member having vent holes corresponding to vent holes in the ceiling plate, and the valve member changing the relative closure of the vent holes when the metal plate is deformed by application of voltage to the piezoelectric ceramic.

摘要翻译： 空调的压电开关值包括固定在其一端的可弯曲金属板; 阀构件，其沿着顶板安装在所述金属板的另一端，所述值构件具有与所述顶板中的通气孔对应的通气孔，并且所述阀构件在所述金属板变形时改变所述通气孔的相对闭合 通过向压电陶瓷施加电压。

公开(公告)号：US20090139446A1

公开(公告)日：2009-06-04

申请号：US11719675

申请日：2005-11-30

申请人： Yoshimichi Kimura ,  Yuichi Sakai

发明人： Yoshimichi Kimura ,  Yuichi Sakai

IPC分类号： C30B9/00

CPC分类号： C30B29/06 ,  C30B11/002 ,  C30B11/003

摘要： Provided is a process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melting method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown.A silicon raw material is melted in an atmosphere of 100% hydrogen at ordinary pressure or an elevated pressure to prepare a silicon melt and simultaneously dissolve hydrogen in the silicon melt. The silicon melt containing hydrogen dissolved therein is solidified. Thereafter, the solid is held at a high temperature around the solidification temperature to grow silicon crystal grains in the solid phase and thereby obtain a polycrystalline silicon ingot.

摘要翻译： 提供了通过普通氢气氛围熔化法廉价地生产与太阳能晶片的转换效率相关的寿命特性提高的多晶硅锭的方法。 在此过程中，硅熔体中氧和杂质的产生被抑制，轻元素杂质通过反应或结晶除去。 可以高速生长细晶粒，并且可以生长晶体结构减小晶体缺陷的高纯度多晶硅锭。 硅原料在常压或高压下在100％氢气气氛中熔融以制备硅熔体并同时将氢溶解在硅熔体中。 含有溶解在其中的氢的硅熔体固化。 然后，将固体保持在固化温度附近的高温下，使固相中的硅晶粒生长，得到多晶硅锭。

公开(公告)号：US20090266414A1

公开(公告)日：2009-10-29

申请号：US12296648

申请日：2007-04-20

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura

IPC分类号： H01L31/04 ,  H01L21/465 ,  H01L31/18 ,  C09K13/00

CPC分类号： H01L31/18 ,  H01L31/02363 ,  Y02E10/50

摘要： Provided are: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric conversion efficiency, and stable in an etching rate and a pyramid shape, which is capable of uniformly forming a fine uneven structure with desired size suitable for a solar cell on the surface thereof; a semiconductor substrate for solar application having a uniform and fine pyramid-shaped uneven structure in a plane; and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure, which has a high stability at initial use. The process comprises etching a semiconductor substrate with the use of an alkaline etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, salts thereof, and silicon, to thereby form an uneven structure on the surface of the semiconductor substrate.

摘要翻译： 提供：以低成本安全地生产光电转换效率优异的半导体基板，蚀刻速度和金字塔形状稳定的方法，其能够均匀地形成具有适合于太阳能电池的所需尺寸的精细不均匀结构 其表面; 一种用于太阳能应用的半导体衬底，其在平面中具有均匀且精细的棱锥形不均匀结构; 以及用于形成具有均匀且精细不均匀结构的半导体衬底的蚀刻溶液，其在初始使用时具有高稳定性。 该方法包括使用含有选自碳数为1至12的羧酸和分子中至少一个羧基的羧酸中的至少一种的碱性蚀刻溶液蚀刻半导体衬底，其盐， 和硅，从而在半导体衬底的表面上形成不均匀的结构。

公开(公告)号：US20100269903A1

公开(公告)日：2010-10-28

申请号：US12745521

申请日：2008-11-28

申请人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura ,  Takehisa Kato ,  Masahiko Kakizawa

发明人： Masato Tsuchiya ,  Ikuo Mashimo ,  Yoshimichi Kimura ,  Takehisa Kato ,  Masahiko Kakizawa

IPC分类号： H01L31/0368 ,  H01L21/306

CPC分类号： H01L31/02363 ,  H01L31/04 ,  Y02E10/50

摘要： Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.

摘要翻译： 提供了一种安全，低成本的制造多晶硅基板的方法，该多晶硅基板具有优异的光电转换效率，通过该方法可以在多晶硅基板的表面上简单地形成适合于太阳能电池的均匀的微小不均匀结构; 以及具有均匀的，细小的棱锥状的不均匀结构的多晶硅基板，从而能够显着降低其反射率。 通过用含有选自碳原子数为1以上且12以下的羧酸中的至少一种的碱性蚀刻溶液蚀刻多晶硅基板，在多晶硅基板的表面上形成凹凸结构， 在一个分子中具有至少一个羧基，和酸的盐。