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    TEXTURE STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREFOR
    1.
    发明公开
    TEXTURE STRUCTURE OF SOLAR CELL AND PREPARATION METHOD THEREFOR 审中-公开

    公开(公告)号：US20240355942A1

    公开(公告)日：2024-10-24

    申请号：US18685271

    申请日：2022-09-23

    申请人： TRINA SOLAR CO., LTD.

    发明人： Hong CHEN ,  Jifan GAO ,  Yifeng CHEN

    IPC分类号： H01L31/0236 ,  C30B33/10 ,  H01L31/068 ,  H01L31/18

    CPC分类号： H01L31/02363 ,  C30B33/10 ,  H01L31/02366 ,  H01L31/068 ,  H01L31/1892

    摘要： The present disclosure provides a texture structure of a solar cell and a preparation method therefor. The texture structure includes a texture with a surface including a contact region and a non-contact region. The contact region is provided with a metal gate line, and has a specific surface area smaller than the non-contact region. According to the texture structure of a solar cell and the preparation method therefor provided by the present disclosure, the texture of a metal gate line coverage region and the texture of a metal gate line non-coverage region form different microscopic appearances of texture structure, and the texture structure in the non-coverage region has a specific surface area much larger than the texture structure in the coverage region, thereby reducing a contact area between a slurry metal and a PN junction on the texture, reducing the metal recombination by more than 20%, and improving the conversion efficiency.

    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC
    4.
    发明公开
    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC 审中-公开

    公开(公告)号：US20230197435A1

    公开(公告)日：2023-06-22

    申请号：US17907517

    申请日：2021-01-12

    申请人： Soitec

    发明人： Hugo Biard

    IPC分类号： H01L21/02 ,  C30B1/02 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/32 ,  C23C16/01

    CPC分类号： H01L21/02002 ,  H01L21/02079 ,  C30B1/023 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/325 ,  C23C16/01

    摘要： A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline silicon carbide, b) a step of ion implantation of light species into the donor substrate, to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free surface of the donor substrate, c) a succession of n steps of forming crystalline carrier layers, with n greater than or equal to 2; the n crystalline carrier layers being positioned on the front face of the donor substrate successively one on the other, and forming the carrier substrate; each formation step comprising: direct liquid injection chemical vapor deposition, at a temperature below 900° C., to form a carrier layer, the carrier layer being formed by an at least partially amorphous SiC matrix, and having a thickness of less than or equal to 200 microns; a crystallization heat treatment of the carrier layer, at a temperature of less than or equal to 1000° C., to form a crystalline carrier layer; d) a step of separation along the buried brittle plane, to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the rest of the donor substrate.

    OFF-AXIS EPITAXIAL LIFT PROCESS
    5.
    发明申请
    OFF-AXIS EPITAXIAL LIFT PROCESS 审中-公开

    公开(公告)号：US20180209018A1

    公开(公告)日：2018-07-26

    申请号：US15934409

    申请日：2018-03-23

    申请人： ALTA DEVICES, INC.

    发明人： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

    IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

    CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

    摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.