-
1.发明申请公开(公告)号：US20070272282A1
公开(公告)日：2007-11-29
申请号：US10577744
申请日：2004-10-28
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
CPC分类号： C11D7/3263 , C11D11/0047 , G03F7/425 , H01L21/31133
摘要： Disclosed is a composition for removing a photoresist which contains a reaction product of a primary or secondary organic amine having a hydroxyl group with an ethylene carbonate, propylene carbonate, γ-butylolactone, 1,3-dihydroxy-2-propanone, or a monovalent or divalent carboxylic acid, if necessary an organic amine, and a water-soluble organic solvent and/or water. This composition is capable of removing a photoresist with high performance and preventing corrosion of a metal wiring material. By using such a composition, there occurs no problem such that impurities precipitate and adhere to the substrate or the like during water rinsing after removal.
摘要翻译： 公开了一种除去含有羟基的伯或仲有机胺与碳酸亚乙酯，碳酸亚丙酯，γ-丁内酯，1,3-二羟基-2-丙酮或单价或 二价羧酸，如果需要的话是有机胺，和水溶性有机溶剂和/或水。 该组合物能够以高性能去除光致抗蚀剂并防止金属布线材料的腐蚀。 通过使用这样的组合物，不会发生杂质在去除后的水洗中沉淀并附着到基板等上。
-
公开(公告)号：US5896874A
公开(公告)日：1999-04-27
申请号：US810816
申请日：1997-03-06
IPC分类号： G03F7/42 , G05D11/13 , H01L21/027 , H01L21/306 , B08B3/04
CPC分类号： G03F7/425 , G05D11/138
摘要： In a semiconductor manufacturing process or a liquid crystal board manufacturing process, a resist stripping solution blending an organic alkali and an organic solvent is used for stripping the resist completely from the board. An apparatus for controlling this resist stripping solution comprises a resist stripping solution discharge device for discharging the resist stripping solution by detecting the dissolved resist concentration in the resist stripping solution by using an absorption photometer, a source solution and water replenishing device for replenishing the resist stripping source solution and pure water by detecting the liquid level of the resist stripping solution by a liquid level gauge, and a source solution and/or water replenishing device for replenishing at least one of the resist stripping source solution pure water by detecting the water concentration of the resist stripping solution by using an another absorption photometer. As a result, in an apparatus for controlling a resist stripping solution used in resist stripping in a semiconductor manufacturing process or a liquid crystal board manufacturing process, the quality of the resist stripping solution is controlled constantly, the solution consumption is saved, the operation down time is reduced, and the cost is lowered.
摘要翻译： 在半导体制造工艺或液晶板制造工艺中，使用混合有机碱和有机溶剂的抗蚀剂剥离溶液来完全剥离抗蚀剂。 用于控制该抗蚀剂剥离溶液的装置包括：抗蚀剂剥离溶液排出装置，用于通过使用吸收光度计，用于补充抗蚀剂剥离的源溶液和水补充装置检测抗蚀剂剥离溶液中溶解的抗蚀剂浓度来排出抗蚀剂剥离溶液 源液和纯水，通过液位计检测抗蚀剂剥离溶液的液面，以及源溶液和/或水补充装置，用于通过检测抗蚀剂剥离源溶液纯水中的至少一种来补充至少一种抗蚀剂剥离源溶液纯水 通过使用另一种吸收光度计的抗蚀剂剥离溶液。 结果，在半导体制造工序或液晶板制造工序中，在抗蚀剂剥离中使用的抗蚀剂剥离液的控制装置中，不断地控制抗蚀剂剥离液的质量，节省溶液消耗，降低操作 时间缩短，成本降低。
-
公开(公告)号：US20080268369A1
公开(公告)日：2008-10-30
申请号：US11630291
申请日：2005-06-21
CPC分类号： G03F7/0236 , G03F7/022 , G03F7/095 , H01L21/0272
摘要： Disclosed is a highly practical composition for under layers which enables to form a good undercut profile without causing a intermixing layer between an upper layer resist and an under layer film in a bi-layer photoresist process. Also disclosed is a method for forming a resist pattern. Specifically disclosed is a composition for under layer organic films for forming a resist pattern having an undercut profile on a substrate by exposing and developing a bi-layer film through a mask which bi-layer film is formed on the substrate and composed of an under layer organic film and an upper layer positive resist film. Such a composition for under layer organic films comprises an alkali-soluble resin (A) obtained by condensing a phenol component (A1) which is a mixture of 3-methylphenol and 4-methylphenol and an aldehyde component (A2) comprising an aromatic aldehyde and formaldehyde, and a solvent (B). Also specifically disclosed is a method for forming a resist pattern using such a composition of under layer organic films.
摘要翻译： 公开了一种用于下层的高度实用的组合物，其能够形成良好的底切轮廓，而不会在双层光致抗蚀剂工艺中在上层抗蚀剂和下层膜之间引起混合层。 还公开了形成抗蚀剂图案的方法。 具体公开了一种下层有机膜的组合物，其用于通过在基板上形成双层膜的掩模曝光和显影双层膜来形成在基板上具有底切轮廓的抗蚀剂图案，该组合物由下层 有机膜和上层正性抗蚀剂膜。 这种下层有机膜用组合物包含通过将作为3-甲基苯酚与4-甲基苯酚的混合物的酚成分（A1）和含有芳香醛的醛成分（A2）缩合得到的碱溶性树脂（A）和 甲醛和溶剂（B）。 还具体公开了使用这种下层有机膜的组合物形成抗蚀剂图案的方法。
-
公开(公告)号：US07101517B2
公开(公告)日：2006-09-05
申请号：US10342769
申请日：2003-01-15
申请人： Toshimoto Nakagawa , Yuko Katagiri , Shu Ogawa , Yasuyuki Kobayakawa , Makoto Kikukawa , Yutaka Saito , Yoshitaka Nishijima
发明人： Toshimoto Nakagawa , Yuko Katagiri , Shu Ogawa , Yasuyuki Kobayakawa , Makoto Kikukawa , Yutaka Saito , Yoshitaka Nishijima
IPC分类号： B01J19/08
摘要： A processing solution preparation and supply apparatus includes a dissolving preparation bath to which a material powder and ultrapure water are supplied. This dissolving preparation bath is connected to a substrate processing apparatus via a pipe, and a processing solution prepared from the material powder on-site is supplied to the processing apparatus. To reduce an increase in the microorganism concentration in the ultrapure water, this ultrapure water is circulated substantially constantly. This suppresses deterioration and concentration fluctuations of a processing solution for use in processing of a semiconductor substrate, when this processing solution is supplied to the use side. This also reduces particles and improves the economical efficiency.
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
