公开(公告)号：US08612811B2

公开(公告)日：2013-12-17

申请号：US13119633

申请日：2009-09-04

申请人： Chizu Matsumoto ,  Yuichi Hamamura ,  Yoshiyuki Tsunoda ,  Kazuyuki Tsunokuni

发明人： Chizu Matsumoto ,  Yuichi Hamamura ,  Yoshiyuki Tsunoda ,  Kazuyuki Tsunokuni

IPC分类号： G11C29/56

CPC分类号： G11C29/006 ,  G06F17/5018 ,  G06F2217/10 ,  G11C29/54 ,  G11C29/56004

摘要： In a managing system for a semiconductor manufacturing apparatus, a predicting unit 121 predicts a characteristic defective ratio and a foreign-substance defective ratio of each process obtains an actual defective ratio of each fail bit mode and a critical area of each process and each fail bit mode, calculates the number of foreign substances of each process by using the actual defective ratio of each fail bit mode and the critical area of each process and each fail bit mode, the fail bit mode being except for an arbitrary fail bit mode, calculates a foreign-substance defective ratio of each process and a foreign-substance defective ratio of each fail bit mode by using the number of foreign substances, and calculates a characteristic defective ratio of the arbitrary fail bit mode based on the foreign-substance defective ratio and actual defective ratio of each fail bit mode.

摘要翻译： 在半导体制造装置的管理系统中，预测单元121预测每个处理的特征缺陷率和异物缺陷率，获得每个故障位模式和每个处理的临界区域的实际缺陷率以及每个故障位 模式，通过使用每个故障位模式的实际故障率和每个过程的关键区域以及每个故障位模式来计算每个过程的异物数量，故障位模式除了任意故障位模式，计算出 通过使用异物数量，每个处理的异物缺陷率和每个故障位模式的异物缺陷率，并且基于异物缺陷率和实际值计算任意故障位模式的特征缺陷率 每个故障位模式的故障率。

公开(公告)号：US20110172806A1

公开(公告)日：2011-07-14

申请号：US13119633

申请日：2009-09-04

申请人： Chizu Matsumoto ,  Yuichi Hamamura ,  Yoshiyuki Tsunoda ,  Kazuyuki Tsunokuni

发明人： Chizu Matsumoto ,  Yuichi Hamamura ,  Yoshiyuki Tsunoda ,  Kazuyuki Tsunokuni

IPC分类号： G06F19/00

CPC分类号： G11C29/006 ,  G06F17/5018 ,  G06F2217/10 ,  G11C29/54 ,  G11C29/56004

摘要： In a managing system for a semiconductor manufacturing apparatus, a predicting unit 121 predicts a characteristic defective ratio and a foreign-substance defective ratio of each process obtains an actual defective ratio of each fail bit mode and a critical area of each process and each fail bit mode, calculates the number of foreign substances of each process by using the actual defective ratio of each fail bit mode and the critical area of each process and each fail bit mode, the fail bit mode being except for an arbitrary fail bit mode, calculates a foreign-substance defective ratio of each process and a foreign-substance defective ratio of each fail bit mode by using the number of foreign substances, and calculates a characteristic defective ratio of the arbitrary fail bit mode based on the foreign-substance defective ratio and actual defective ratio of each fail bit mode.

摘要翻译： 在半导体制造装置的管理系统中，预测单元121预测每个处理的特征缺陷率和异物缺陷率，获得每个故障位模式和每个处理的临界区域的实际缺陷率以及每个故障位 模式，通过使用每个故障位模式的实际故障率和每个过程的关键区域以及每个故障位模式来计算每个过程的异物数量，故障位模式除了任意故障位模式，计算出 通过使用异物数量，每个处理的异物缺陷率和每个故障位模式的异物缺陷率，并且基于异物缺陷率和实际值计算任意故障位模式的特征缺陷率 每个故障位模式的故障率。