Nonvolatile memory
    1.
    发明授权
    Nonvolatile memory 失效
    非易失性存储器

    公开(公告)号:US06507509B1

    公开(公告)日:2003-01-14

    申请号:US09856913

    申请日:2001-08-17

    IPC分类号: G11C1122

    摘要: High device reliability, a reduction in power consumption, and a high operation speed are achieved. When a predetermined bias voltage is applied between a source 1 and a drain 2 to change a gate voltage, a current discretely flows between the source 1 and the drain 2 in accordance with quantized electrostatic energy levels in an island electrode 3. The switching ON/OFF of the current between the source 1 and the drain 2 in this case is enabled by applying ½-electron charge to a gate. When the gate voltage induces polarization in a ferroelectric layer 6, its electric field is applied to the island electrode 3. The current between the source 1 and the drain 2 in this case can be measured with high sensitivity. Charge holding is carried out by the polarization in the ferroelectric layer 6, and stored data can be held even if power supply is cut off.

    摘要翻译: 实现了高的设备可靠性,功耗的降低和高的运行速度。 当在源极1和漏极2之间施加预定的偏置电压以改变栅极电压时,根据岛状电极3中的量化的静电能量水平,电流离散地流过源极1和漏极2之间。开关导通/ 在这种情况下,源1和漏极2之间的电流的截止通过向栅极施加1/2电子电荷来实现。 当栅极电压在铁电层6中引起极化时,其电场被施加到岛状电极3.在这种情况下,源1和漏极2之间的电流可以高灵敏度地测量。 通过强电介质层6中的极化进行电荷保持,即使电源被切断,也可以保持存储的数据。