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    Method of scanning a substrate, and method and apparatus for analyzing crystal characteristics
    5.
    发明授权
    Method of scanning a substrate, and method and apparatus for analyzing crystal characteristics 有权
    扫描基板的方法以及分析晶体特性的方法和装置

    公开(公告)号：US07626164B2

    公开(公告)日：2009-12-01

    申请号：US11564726

    申请日：2006-11-29

    申请人： Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

    发明人： Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

    IPC分类号： G01N23/00

    CPC分类号： G01N23/203

    摘要： In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

    摘要翻译： 在一个实施例中，公开了一种扫描衬底的方法，以及用于分析晶体特性的方法和装置。 使用第一电子束和第二电子束对扫描区域进行顺序扫描。 通过第二电子束从扫描区域去除由第一电子束累积在扫描区域中的电子。 当扫描区域的尺寸与第一电子束的光斑尺寸基本相同时，相邻的扫描区域彼此部分重叠。 当每个扫描区域大于第一电子束的光斑尺寸时，相邻的扫描区域彼此不重叠。 通过照射第一电子束来分析从每个扫描区域发射的背散射电子来分析扫描区域的图像，以分析衬底上的电路图案的晶体特性。

    METHOD OF SCANNING A SUBSTRATE, AND METHOD AND APPARATUS FOR ANALYZING CRYSTAL CHARACTERISTICS
    6.
    发明申请
    METHOD OF SCANNING A SUBSTRATE, AND METHOD AND APPARATUS FOR ANALYZING CRYSTAL CHARACTERISTICS 有权
    扫描基板的方法以及分析晶体特性的方法和装置

    公开(公告)号：US20070120054A1

    公开(公告)日：2007-05-31

    申请号：US11564726

    申请日：2006-11-29

    申请人： Young-Jee YOON ,  Jung-Taek LIM ,  Tae-Sung KIM ,  Chung-Sam JUN ,  Sung-Hong PARK

    发明人： Young-Jee YOON ,  Jung-Taek LIM ,  Tae-Sung KIM ,  Chung-Sam JUN ,  Sung-Hong PARK

    IPC分类号： G01N23/00

    CPC分类号： G01N23/203

    摘要： In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

    摘要翻译： 在一个实施例中，公开了一种扫描衬底的方法，以及用于分析晶体特性的方法和装置。 使用第一电子束和第二电子束对扫描区域进行顺序扫描。 通过第二电子束从扫描区域去除由第一电子束累积在扫描区域中的电子。 当扫描区域的尺寸与第一电子束的光斑尺寸基本相同时，相邻的扫描区域彼此部分重叠。 当每个扫描区域大于第一电子束的光斑尺寸时，相邻的扫描区域彼此不重叠。 通过照射第一电子束来分析从每个扫描区域发射的背散射电子来分析扫描区域的图像，以分析衬底上的电路图案的晶体特性。

    METHOD OF INSPECTING A DEFECT ON A SUBSTRATE
    7.
    发明申请
    METHOD OF INSPECTING A DEFECT ON A SUBSTRATE 审中-公开
    检查基板上的缺陷的方法

    公开(公告)号：US20070030479A1

    公开(公告)日：2007-02-08

    申请号：US11462954

    申请日：2006-08-07

    申请人： Sung-Hong PARK ,  Young-Jee YOON ,  Jung-Taek LIM ,  Chung-Sam JUN

    发明人： Sung-Hong PARK ,  Young-Jee YOON ,  Jung-Taek LIM ,  Chung-Sam JUN

    IPC分类号： G01N21/88

    CPC分类号： G01N21/9501

    摘要： In a method, with improved utilization of memory, of inspecting a defect on an object, the object is divided into a plurality of inspection regions. A plurality of levels is determined according to the numbers of defects, which are expected before detecting the defects, on the inspection regions. The defects on a selected inspection region are detected. The level including a range, which corresponds to the number of defects detected on the selected inspection region, is assigned to the selected inspection region with reference to the number of defects detected on the selected inspection region. The steps of detecting defects and assigning levels are repeated with respect to remaining inspection regions.

    摘要翻译： 在一种方法中，通过改善存储器的利用率，检查物体上的缺陷，物体被分成多个检查区域。 根据在检测区域之前预期的缺陷数量来确定多个级别。 检测到所选择的检查区域的缺陷。 参考在所选择的检查区域上检测到的缺陷的数量，将包括对应于在所选择的检查区域上检测到的缺陷数量的范围的级别分配给所选择的检查区域。 相对于剩余的检查区域重复检测缺陷和分配水平的步骤。

    Apparatus and method for inspecting a surface of a wafer
    10.
    发明授权
    Apparatus and method for inspecting a surface of a wafer 有权
    用于检查晶片表面的装置和方法

    公开(公告)号：US07697130B2

    公开(公告)日：2010-04-13

    申请号：US12368020

    申请日：2009-02-09

    申请人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

    发明人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

    IPC分类号： G01N21/88 ,  G06F19/00

    CPC分类号： G01N21/9501 ,  G01N2021/8858 ,  G01N2021/8861

    摘要： A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

    摘要翻译： 表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性， 吞吐量和生产力。