Defect inspection apparatus, defect inspection method, and manufacture method for semiconductor device
    4.
    发明授权
    Defect inspection apparatus, defect inspection method, and manufacture method for semiconductor device 有权
    缺陷检查装置,缺陷检查方法以及半导体装置的制造方法

    公开(公告)号:US08270703B2

    公开(公告)日:2012-09-18

    申请号:US12404430

    申请日:2009-03-16

    IPC分类号: G06K9/00

    摘要: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

    摘要翻译: 用于区分伪缺陷与由工艺故障引起的缺陷的区别大小被存储在第一存储区域中。 缺陷数据存储在第二存储区域中。 处理单元检测晶片表面上的缺陷,并将缺陷数据存储在第二存储区域中。 在对晶片表面的所有区域完成缺陷检测处理之前,将部分区域中检测到的缺陷的大小与存储在第一存储区域中的区别大小进行比较。 如果检测到的缺陷的大小等于或大于识别尺寸,则通过输出单元输出警报,而如果没有检测到具有等于或大于区分大小的大小的缺陷,则执行缺陷检测处理 因为该区域仍未进行缺陷检测处理。

    Apparatus and method for inspecting a surface of a wafer
    5.
    发明授权
    Apparatus and method for inspecting a surface of a wafer 有权
    用于检查晶片表面的装置和方法

    公开(公告)号:US07697130B2

    公开(公告)日:2010-04-13

    申请号:US12368020

    申请日:2009-02-09

    IPC分类号: G01N21/88 G06F19/00

    摘要: A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

    摘要翻译: 表面检查装置和方法提高晶片生产率,其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率,随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时,扫描速度增加,跳跃规则的水平增加,并且当缺陷密度增加时,扫描速度降低,并且跳过规则的水平降低以精确地检测缺陷,从而提高可靠性, 吞吐量和生产力。

    DEFECT INSPECTION APPARATUS, DEFECT INSPECTION METHOD, AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE
    6.
    发明申请
    DEFECT INSPECTION APPARATUS, DEFECT INSPECTION METHOD, AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE 有权
    缺陷检查装置,缺陷检查方法和半导体器件的制造方法

    公开(公告)号:US20090304261A1

    公开(公告)日:2009-12-10

    申请号:US12404430

    申请日:2009-03-16

    IPC分类号: G06K9/00 G08B21/00 H01L21/66

    摘要: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

    摘要翻译: 用于区分伪缺陷与由工艺故障引起的缺陷的区别大小被存储在第一存储区域中。 缺陷数据存储在第二存储区域中。 处理单元检测晶片表面上的缺陷,并将缺陷数据存储在第二存储区域中。 在对晶片表面的所有区域完成缺陷检测处理之前,将部分区域中检测到的缺陷的大小与存储在第一存储区域中的区别大小进行比较。 如果检测到的缺陷的大小等于或大于识别尺寸,则通过输出单元输出警报,而如果没有检测到具有等于或大于区分大小的大小的缺陷,则执行缺陷检测处理 因为该区域仍未进行缺陷检测处理。

    Method of measuring the period of surface defects
    7.
    发明授权
    Method of measuring the period of surface defects 失效
    测量表面缺陷周期的方法

    公开(公告)号:US4982600A

    公开(公告)日:1991-01-08

    申请号:US405215

    申请日:1989-09-11

    摘要: To measure the period with which a surface defect recurs in a surface of a web-like material moving in its lengthwise direction, surface defects distributed over the surface are detected in that lengthwise direction. Positional data and distance data as to the detected surface defects relative to one another are collected for a predetermined length of the web-like material. The web-like material is determined to have a periodic surface defect appearing with a period between predetermined maximum and minimum periods when the distance data include a distance equivalent to an elemental period that is a whole-number multiple of a fundamental period.

    METHOD FOR ADAPTIVE SAMPLING IN EXAMINING AN OBJECT AND SYSTEM THEREOF

    公开(公告)号:US20180306728A1

    公开(公告)日:2018-10-25

    申请号:US15343090

    申请日:2016-11-03

    IPC分类号: G01N21/88 G01N21/95

    摘要: Examining an object, comprising: receiving potential defects, each associated with a location; performing first clustering of the potential defects to obtain first and second subsets, the clustering performed such that potential defects in the first subset are denser in a physical area than potential defects in the second subset; automatically assigning first validity probabilities to potential defects in the first and second subsets; selecting for review potential defects from the first and second subsets, according to a third policy, and in accordance with a strategy for combining top elements and randomly selected elements from the merged list; receiving indications for potential defects in part of the potential defect lists, subsequent to potential defects being reviewed; updating the policies in accordance with validation or classification of items in the first and second subsets; and repeating said assigning, selecting, receiving and updating with the updated policies, until a stopping criteria is observed.