公开(公告)号：US06824452B1

公开(公告)日：2004-11-30

申请号：US10605425

申请日：2003-09-30

申请人： Yung-Tai Hung ,  Yuhturng Liu ,  Hsueh-Hao Shih ,  Kuang-Chao Chen

发明人： Yung-Tai Hung ,  Yuhturng Liu ,  Hsueh-Hao Shih ,  Kuang-Chao Chen

IPC分类号： B24B100

CPC分类号： B24B37/24 ,  B24B37/042 ,  B24D3/32 ,  B24D13/147

摘要： A chemical mechanical polishing to polish a substrate having a layer to be polished thereon is described. A pre-polishing process is performed using a softer polishing pad to remove partially raised parts of the layer to be polished before conducting a polishing process using a harder polishing pad. Since the first polishing pad is flexible, porous and with low density, the first polishing pad can be deformed to increase contact areas between the first polishing pad and the raised part of the layer to be polished, and the abrasives are embedded easily in holes of the surface of the first polishing pad. Ultimately, the layer to be polished can be polished directly during the pre-polishing process. Therefore, the processing time is reduced, the consumption of the slurry is decreased and the process cost can be cut down substantially.

摘要翻译： 描述了对具有待抛光层的基板进行化学机械抛光。 在使用更硬的抛光垫进行抛光处理之前，使用较软的抛光垫进行预抛光工艺以去除待抛光层的部分凸起部分。 由于第一抛光垫是柔性的，多孔的并且具有低密度，所以第一抛光垫可以变形以增加第一抛光垫与被抛光层的凸起部分之间的接触面积，并且磨料易于嵌入到 第一抛光垫的表面。 最终，抛光过程中可以直接抛光抛光层。 因此，处理时间缩短，浆料的消耗量减少，工序成本大幅降低。

公开(公告)号：US06509249B1

公开(公告)日：2003-01-21

申请号：US10158748

申请日：2002-05-28

申请人： Yuhturng Liu ,  Chi-Tung Huang

发明人： Yuhturng Liu ,  Chi-Tung Huang

IPC分类号： G01R3126

CPC分类号： H01L21/76232

摘要： A method of fabricating a shallow trench isolation structure. A pad oxide layer, a mask layer, a dielectric anti-reflection coating layer and a cap oxide layer are formed on a substrate sequentially. A trench is formed in the substrate. A liner oxide layer is formed along a surface of the trench. An isolation layer is formed over the substrate to fill the trench. Using the mask layer as a polishing endpoint, the insulation layer, the dielectric anti-reflection coating layer and the cap oxide layer over the mask layer are removed. The thickness of the mask layer is controlled within a first fixed range, and the thickness of the dielectric anti-reflection coating layer is controlled, within a second fixed range, such that the light source of the optical endpoint detection system can produce a maximum reflected light signal. The mask layer and the pad oxide layer are then removed.

摘要翻译： 一种制造浅沟槽隔离结构的方法。 在衬底上依次形成衬垫氧化物层，掩模层，电介质抗反射涂层和帽氧化物层。 在衬底中形成沟槽。 沿着沟槽的表面形成衬里氧化物层。 在衬底上形成隔离层以填充沟槽。 使用掩模层作为抛光终点，除去掩模层上的绝缘层，电介质抗反射涂层和盖氧化物层。 将掩模层的厚度控制在第一固定范围内，并且在第二固定范围内控制电介质防反射涂层的厚度，使得光学终点检测系统的光源可以产生最大反射 光信号。 然后去除掩模层和焊盘氧化物层。