公开(公告)号：US5098675A

公开(公告)日：1992-03-24

申请号：US464957

申请日：1990-01-16

申请人： Shuitsu Matsuo ,  Kazuo Ito ,  Masayuki Saito ,  Yoshihisa Wada ,  Yukifumi Sakai

发明人： Shuitsu Matsuo ,  Kazuo Ito ,  Masayuki Saito ,  Yoshihisa Wada ,  Yukifumi Sakai

IPC分类号： C30B15/10 ,  C30B15/14

CPC分类号： C30B15/10 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal pull-up apparatus includes a crucible for containing a molten silicon material, an annular heater disposed so as to surround the crucible for heating the silicon material in the crucible, and a plurality of plate-like members made of heat insulation material and disposed so as to surround the heater, each of the plate-like members has an arc-shaped cross section not less than a two-third circle and is connected with each other at respective side edges thereof such that the plurality of the plate-like members are assembled into a shape of a cylinder having wave-like circumferential side walls.

摘要翻译： 硅单晶上拉装置包括用于容纳熔融硅材料的坩埚，设置成围绕用于加热坩埚中的硅材料的坩埚的环形加热器，以及由绝热材料制成的多个板状部件 并且设置成围绕加热器，每个板状构件具有不小于二分之三圆的弧形横截面，并且在其各自的侧边缘处彼此连接，使得多个板状构件 类似的构件被组装成具有波浪形周向侧壁的圆柱体的形状。

公开(公告)号：US4771021A

公开(公告)日：1988-09-13

申请号：US877918

申请日：1986-06-24

申请人： Teruyasu Tamamizu ,  Yukifumi Sakai ,  Hiroshi Tashiro

发明人： Teruyasu Tamamizu ,  Yukifumi Sakai ,  Hiroshi Tashiro

IPC分类号： C04B35/573 ,  C30B31/10 ,  C04B35/54

CPC分类号： C30B31/10 ,  C04B35/573

摘要： A component for a semi-conductor diffusion furnace includes a sintered silicon carbide matrix resulting from sintering of silicon carbide powder. The silicon carbide power consists essentially of silicon carbide having an average particle size of 10-200 microns (preferably 30-170 microns) and is mixed with fine carbon powder and fine silicon powder.

摘要翻译： 用于半导体扩散炉的部件包括由碳化硅粉末烧结产生的烧结碳化硅基体。 碳化硅功率基本上由平均粒度为10-200微米（优选30-170微米）的碳化硅组成，并与细碳粉和细硅粉混合。