SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD
    1.
    发明申请
    SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD 审中-公开
    基板处理方法和掩模制造方法

    公开(公告)号:US20090305153A1

    公开(公告)日:2009-12-10

    申请号:US12479202

    申请日:2009-06-05

    IPC分类号: G03F7/20 B08B3/04 B08B7/04

    摘要: A substrate processing method uses a processing fluid to selectively process only a region of a portion of a processing surface of a substrate to be processed, by causing a discharge aperture and a suction aperture of a nozzle having the discharge aperture and the suction aperture for the processing fluid and provided movable relative to the substrate to be processed to face the processing surface of the substrate and suctioning the processing fluid supplied onto the processing surface through the suction aperture while supplying the processing fluid from the discharge aperture onto the processing surface.

    摘要翻译: 基板处理方法使用处理流体仅通过使具有排出孔的喷嘴的排出孔和吸入孔和用于该待处理的基板的吸入孔的吸入孔选择性地处理待处理的基板的一部分的处理表面的区域 处理流体,并且相对于要处理的基板可移动以面对基板的处理表面,并且通过所述吸入孔抽吸供给到处理表面上的处理流体,同时将处理流体从排出孔提供到处理表面。