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公开(公告)号：US07713378B2
公开(公告)日：2010-05-11
申请号：US10890318
申请日：2004-07-12
IPC分类号： C23F1/00 , H01L21/306 , C23C16/56 , C23C16/02
CPC分类号： H01L21/6708
摘要： A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separated by an interspace communicating with the gas-supply-head exterior, and a plurality of coplanar facing plates perforated, top-side-to-underside, with gas-discharging through-holes receiving the distal ends of the gas conduits, and with a latticework of gaps surrounding the discharging through-holes and communicating with the interspace; and a gas supply device for supplying ozone gas to the discharging through-holes. The facing plates are of small volume such that even should heat transfer between the plates and the substrate occur, thermal equilibrium between the plates and the substrate is reached in a short time, facilitating substrate temperature management.
摘要翻译： 基板臭氧处理装置包括：基板承载/加热平台; 在平台上方，由主平台导向孔组成的气体供给头，气体导管在其基端连接到排气孔，并与气体供应头外部连通的空间隔开， 以及多个面向平面的板，其顶侧到下侧，具有容纳气体管道的远端的气体排放通孔，以及围绕排放通孔的间隙的网格，并与间隙连通 ; 以及用于向排出通孔供给臭氧气体的气体供给装置。 面板的体积小，使得即使在板和基板之间发生热传递，板和基板之间的热平衡在短时间内达到，从而有助于衬底温度管理。
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公开(公告)号：US09199303B2
公开(公告)日：2015-12-01
申请号：US14241214
申请日：2012-09-04
IPC分类号： B22D19/00 , B22D45/00 , B22D18/02 , B22D19/08 , B22D39/02 , H01L21/67 , H01L21/768 , C23C6/00
CPC分类号： B22D18/02 , B22D19/00 , B22D19/08 , B22D39/02 , C23C6/00 , H01L21/67092 , H01L21/76898
摘要： A metal filling apparatus minimizes the thickness of excess metal formed on an object and fills molten metal into a minute space to have an opening on the object. A table holds a semiconductor wafer, piston has a pressure portion on a side facing the table, and a pressing mechanism engages the piston onto the wafer, and an airtight chamber is formed by the wafer on the table, housing, and piston. A mechanism reduces pressure inside the chamber by exhausting gas, a mechanism supplies molten metal to the chamber, and a mechanism supplies an inert gas into the chamber.
摘要翻译： 金属填充装置使形成在物体上的多余金属的厚度最小化，并将熔融金属填充到微小的空间中以在物体上具有开口。 工作台保持半导体晶片，活塞在面向桌子的一侧具有压力部分，并且压力机构将活塞接合到晶片上，并且由桌子，壳体和活塞上的晶片形成气密室。 机构通过排出气体来减少腔室内的压力，机构将熔融金属供应到腔室，并且机构将惰性气体供应到腔室中。
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公开(公告)号：US20140246163A1
公开(公告)日：2014-09-04
申请号：US14241214
申请日：2012-09-04
IPC分类号： B22D18/02
CPC分类号： B22D18/02 , B22D19/00 , B22D19/08 , B22D39/02 , C23C6/00 , H01L21/67092 , H01L21/76898
摘要： The present invention relates to a metal filling apparatus which can minimize the thickness of a layer of excess metal formed on an object to be processed after processing and which is capable of filling a molten metal into a minute space (via, through hole) formed to have an opening on the object to be processed. A metal filling apparatus 1 comprises a holding table H holding a semiconductor wafer, a piston P provided facing the holding table H and having a metallic pressing portion formed on the side facing the holding table H, a pressing mechanism 5 provided to be capable of pressing the piston P onto the semiconductor wafer K held on the holding table H and other components, and an airtight processing chamber 2 is formed by the semiconductor wafer held on the holding table H, the housing C and the piston P. Further, the metal filling apparatus 1 comprises a pressure reducing mechanism 3 reducing the pressure inside the processing chamber 2 by exhausting a gas inside the processing chamber 2, a molten metal supply mechanism 4 supplying a molten metal M into the processing chamber 2, and a pressurized-gas supply mechanism 7 supplying an inert gas into the processing chamber 2.
摘要翻译： 金属填充装置技术领域本发明涉及一种金属填充装置，其能够使加工后的待处理物体上形成的多余金属的厚度最小化，并且能够将熔融金属填充到形成为 在待处理对象上有一个开口。 金属填充装置1包括保持半导体晶片的保持台H，与保持台H相对设置的具有形成在面向保持台H的一侧的金属按压部的活塞P，设置成能够按压的按压机构5 通过保持在保持台H，壳体C和活塞P上的半导体晶片形成保持在保持台H上的半导体晶片K上的活塞P和其他部件以及气密处理室2。 设备1包括减压机构3，通过排出处理室2内的气体来减少处理室2内的压力，将熔融金属M供应到处理室2中的熔融金属供给机构4和加压气体供给机构 7将惰性气体供应到处理室2中。
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公开(公告)号：US06867150B2
公开(公告)日：2005-03-15
申请号：US10312560
申请日：2002-03-18
IPC分类号： H01L21/00 , H01L21/306 , H01L21/31
CPC分类号： H01L21/67253 , H01L21/67017
摘要： The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 includes: a placement table 20 on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lifter 30 for moving the placement table 20 up and down; and a control unit 35 for controlling the operation of said lifter 30. During the discharge of the ozone gas, the control unit 35 operates the lifter 30 so as to vary the spacing g between the opposed plate 40 and the substrate K placed on the placement table 20.
摘要翻译： 本发明涉及一种臭氧处理方法和臭氧处理装置，用于进行诸如氧化膜的形成和重整的处理，通过将臭氧气体吹送到诸如半导体衬底的衬底的表面上去除抗蚀膜，或 液晶基板。 臭氧处理装置1包括：放置台20，放置基板K. 用于加热放置在放置台20上的基板K的加热单元; 相对的板40，与基板K相对设置，用于通过形成在与基板K相对的表面的排出口44排出臭氧气体;气体供给装置43，用于将臭氧气体供给到排出口44中; 用于上下移动放置台20的升降器30; 以及用于控制所述提升器30的操作的控制单元35.在排出臭氧气体期间，控制单元35操作升降器30，以便改变相对板40和放置在放置物上的基板K之间的间距g 表20。
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