公开(公告)号：US08541848B2

公开(公告)日：2013-09-24

申请号：US13271342

申请日：2011-10-12

申请人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

发明人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

IPC分类号： H01L29/78

CPC分类号： H01L29/0653 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/7816

摘要： To limit or prevent current crowding, various HV-MOSFET embodiments include a current diversion region disposed near a drain region of an HV-MOSFET and near an upper surface of the semiconductor substrate. In some embodiments, the current diversion region is disposed near a field plate of the HV-MOSFET, wherein the field plate can also help to reduce or “smooth” electric fields near the drain to help limit current crowding. In some embodiments, the current diversion region is a p-doped, n-doped, or intrinsic region that is at a floating voltage potential. This current diversion region can push current deeper into the substrate of the HV-MOSFET (relative to conventional HV-MOSFETs), thereby reducing current crowding during ESD events. By reducing current crowding, the current diversion region makes the HV-MOSFETs disclosed herein more impervious to ESD events and, therefore, more reliable in real-world applications.

摘要翻译： 为了限制或防止电流拥挤，各种HV-MOSFET实施例包括设置在HV-MOSFET的漏极区附近并且在半导体衬底的上表面附近的电流分流区域。 在一些实施例中，电流引流区域设置在HV-MOSFET的场板附近，其中场板还可以帮助减少或“平滑”漏极附近的电场，以帮助限制电流拥挤。 在一些实施例中，电流分流区域是处于浮置电压电位的p掺杂，n掺杂或本征区域。 该电流分流区可以将电流深度推入HV-MOSFET的衬底（相对于传统HV-MOSFET），从而减少ESD事件期间的电流拥挤。 通过减少电流拥挤，电流分流区域使得本文公开的HV-MOSFET更加不可避免地存在ESD事件，因此在现实世界的应用中更可靠。

公开(公告)号：US08653735B2

公开(公告)日：2014-02-18

申请号：US13166061

申请日：2011-06-22

申请人： Shih-Wen Wei ,  Tsung-Shiun Lee ,  Yun-Pei Huang ,  Chun-Liang Kuo

发明人： Shih-Wen Wei ,  Tsung-Shiun Lee ,  Yun-Pei Huang ,  Chun-Liang Kuo

IPC分类号： H05B41/36

CPC分类号： H05B41/2855

摘要： The disclosure provides a backlight module applied to a liquid crystal display device. The backlight module includes: a control circuit for outputting a driving signal according to an analog adjustment signal or a digital adjustment signal; a driving circuit for outputting a lamp voltage according to the driving signal; a fluorescent lamp set, including a plurality of lamps, for receiving the lamp voltage and thereby generating a lamp current; a lamp feedback circuit c for outputting a feedback signal according to the lamp voltage; and a dynamic protection circuit, for dynamically adjusting a protection command signal according to the analog dimming signal or the digital dimming signal, comparing the protection command signal and the feedback signal and thereby outputting a comparing result signal to the control circuit.

摘要翻译： 本公开提供了一种应用于液晶显示装置的背光模块。 背光模块包括：控制电路，用于根据模拟调整信号或数字调节信号输出驱动信号; 驱动电路，用于根据驱动信号输出灯电压; 包括多个灯的荧光灯组，用于接收灯电压，从而产生灯电流; 灯反馈电路c，用于根据灯电压输出反馈信号; 以及动态保护电路，用于根据模拟调光信号或数字调光信号动态调整保护命令信号，比较保护命令信号和反馈信号，从而将比较结果信号输出到控制电路。

公开(公告)号：US20120025712A1

公开(公告)日：2012-02-02

申请号：US13166061

申请日：2011-06-22

申请人： Shih-Wen Wei ,  Tsung-Shiun Lee ,  Yun-Pei Huang ,  Chun-Liang Kuo

发明人： Shih-Wen Wei ,  Tsung-Shiun Lee ,  Yun-Pei Huang ,  Chun-Liang Kuo

IPC分类号： H05B41/36

CPC分类号： H05B41/2855

摘要： The disclosure provides a backlight module applied to a liquid crystal display device. The backlight module includes: a control circuit for outputting a driving signal according to an analog adjustment signal or a digital adjustment signal; a driving circuit for outputting a lamp voltage according to the driving signal; a fluorescent lamp set, including a plurality of lamps, for receiving the lamp voltage and thereby generating a lamp current; a lamp feedback circuit c for outputting a feedback signal according to the lamp voltage; and a dynamic protection circuit, for dynamically adjusting a protection command signal according to the analog dimming signal or the digital dimming signal, comparing the protection command signal and the feedback signal and thereby outputting a comparing result signal to the control circuit.

摘要翻译： 本公开提供了一种应用于液晶显示装置的背光模块。 背光模块包括：控制电路，用于根据模拟调整信号或数字调节信号输出驱动信号; 驱动电路，用于根据驱动信号输出灯电压; 包括多个灯的荧光灯组，用于接收灯电压，从而产生灯电流; 灯反馈电路c，用于根据灯电压输出反馈信号; 以及动态保护电路，用于根据模拟调光信号或数字调光信号动态调整保护命令信号，比较保护命令信号和反馈信号，从而将比较结果信号输出到控制电路。

公开(公告)号：US20130093010A1

公开(公告)日：2013-04-18

申请号：US13271342

申请日：2011-10-12

申请人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

发明人： Yun-Pei Huang ,  Yi-Feng Chang ,  Jam-Wem Lee

IPC分类号： H01L29/78

CPC分类号： H01L29/0653 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/7816

摘要： To limit or prevent current crowding, various HV-MOSFET embodiments include a current diversion region disposed near a drain region of an HV-MOSFET and near an upper surface of the semiconductor substrate. In some embodiments, the current diversion region is disposed near a field plate of the HV-MOSFET, wherein the field plate can also help to reduce or “smooth” electric fields near the drain to help limit current crowding. In some embodiments, the current diversion region is a p-doped, n-doped, or intrinsic region that is at a floating voltage potential. This current diversion region can push current deeper into the substrate of the HV-MOSFET (relative to conventional HV-MOSFETs), thereby reducing current crowding during ESD events. By reducing current crowding, the current diversion region makes the HV-MOSFETs disclosed herein more impervious to ESD events and, therefore, more reliable in real-world applications.

摘要翻译： 为了限制或防止电流拥挤，各种HV-MOSFET实施例包括设置在HV-MOSFET的漏极区附近并且在半导体衬底的上表面附近的电流分流区域。 在一些实施例中，电流引流区域设置在HV-MOSFET的场板附近，其中场板还可以帮助减少或“平滑”漏极附近的电场，以帮助限制电流拥挤。 在一些实施例中，电流分流区域是处于浮置电压电位的p掺杂，n掺杂或本征区域。 该电流分流区可以将电流深度推入HV-MOSFET的衬底（相对于传统HV-MOSFET），从而减少ESD事件期间的电流拥挤。 通过减少电流拥挤，电流分流区域使得本文公开的HV-MOSFET更加不可避免地存在ESD事件，因此在现实世界的应用中更可靠。