公开(公告)号：US20110042009A1

公开(公告)日：2011-02-24

申请号：US12854371

申请日：2010-08-11

Applicant: Dongseok LEE ,  Hwankook CHAE ,  Heeseok MOON ,  Yunkwang CHOI

Inventor： Dongseok LEE ,  Hwankook CHAE ,  Heeseok MOON ,  Yunkwang CHOI

IPC: C23F1/08

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.

Abstract translation: 提供了一种等离子体蚀刻装置。 该装置包括室，阴极组件和整体阴极衬套。 该室提供等离子体反应空间。 阴极组件位于腔室的内部和中心部分并且支撑衬底。 整体阴极衬套具有分别形成在两个水平面并分开间隔开的多个第一通风口和第二通风口，使得腔室内的气体流量和排气流的均匀性得以保持，并且外部插入阴极组件并在其上耦合 下端部分到腔室的内表面。