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    Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and related methods
    4.
    发明授权
    Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and related methods 有权
    等离子体处理室采用其上具有聚焦表面的分配网格，能够使角度通量到达基板，以及相关方法

    公开(公告)号：US09534289B2

    公开(公告)日：2017-01-03

    申请号：US14657405

    申请日：2015-03-13

    申请人： Applied Materials, Inc.

    发明人： Jun Xue ,  Ludovic Godet ,  Qiwei Liang

    IPC分类号： C23F1/00 ,  C23C16/04 ,  H01J37/32

    CPC分类号： C23C16/045 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32633

    摘要： Plasma process chambers employing distribution grids having focusing surfaces thereon enabling angled fluxes to reach a substrate, and associated methods are disclosed. A distribution grid is disposed in a chamber between the plasma and a substrate. The distribution grid includes a first surface facing the substrate and a focusing surface facing the plasma. A passageway extends through the distribution grid, and is sized with a width to prevent the plasma sheath from entering therein. By positioning the focusing surface at an angle other than parallel to the substrate, an ion flux from the plasma may be accelerated across the plasma sheath and particles of the flux pass through the passageway to be incident upon the substrate. In this manner, the angled ion flux may perform thin film deposition and etch processes on sidewalls of features extending orthogonally from or into the substrate, as well as angled implant and surface modification.

    摘要翻译： 等离子体处理室采用其上具有聚焦表面的分配网格，其上形成有角度的焊剂以到达衬底，以及相关方法。 配电网布置在等离子体和基板之间的室中。 配电网包括面向衬底的第一表面和面向等离子体的聚焦表面。 通道延伸穿过配电网，并且具有宽度的尺寸以防止等离子体护套进入其中。 通过将聚焦表面定位在与衬底不同的角度处，来自等离子体的离子通量可以跨越等离子体鞘加速，并且助焊剂的颗粒通过通道入射到衬底上。 以这种方式，成角度的离子通量可以在从基底垂直延伸的特征的侧壁上进行薄膜沉积和蚀刻处理，以及成角度的植入物和表面改性。

    Baffle and substrate treating apparatuses including the same
    5.
    发明授权
    Baffle and substrate treating apparatuses including the same 有权
    挡板和包括其的基板处理装置

    公开(公告)号：US09514919B2

    公开(公告)日：2016-12-06

    申请号：US13557952

    申请日：2012-07-25

    申请人： Seung-Kook Yang ,  Jung-Hyun Kang

    发明人： Seung-Kook Yang ,  Jung-Hyun Kang

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32633

    摘要： Provided is a substrate treating apparatus, which includes a plasma generating part configured to generate plasma, a housing disposed under the plasma generating part, and having a space therein, a susceptor disposed within the housing and supporting a substrate, and a baffle including injection holes injecting the plasma supplied from the plasma generating part, to the substrate. The baffle includes a base in which the injection holes are formed, and a central portion of the base is thicker than an edge thereof.

    摘要翻译： 提供了一种基板处理装置，其包括构造成产生等离子体的等离子体产生部，设置在等离子体产生部下方的壳体，其中具有空间，设置在壳体内并支撑基板的基座，以及包括喷射孔 将从等离子体产生部分供应的等离子体注入基板。 挡板包括其中形成有注入孔的基部，并且基部的中心部分比其边缘更厚。

    PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE-CVD) APPARATUS AND METHOD OF OPERATING THE SAME
    6.
    发明申请
    PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE-CVD) APPARATUS AND METHOD OF OPERATING THE SAME 审中-公开
    等离子体增强化学蒸气沉积（PE-CVD）装置及其操作方法

    公开(公告)号：US20160281225A1

    公开(公告)日：2016-09-29

    申请号：US14959333

    申请日：2015-12-04

    申请人： Minjong KIM ,  Jung-soo YOON ,  Jang-Hee LEE ,  Jongwon HONG

    发明人： Minjong KIM ,  Jung-soo YOON ,  Jang-Hee LEE ,  Jongwon HONG

    IPC分类号： C23C16/455 ,  C23C16/50

    CPC分类号： C23C16/455 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32633

    摘要： A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

    摘要翻译： 沉积设备包括处理室中的卡盘，卡盘具有其上装载有基底的顶表面，设置在卡盘上方的喷头和设置在处理室中的护栏延伸部。 在沉积过程中，等离子体在喷淋头和装载的基板之间的空间中产生。 栅栏延伸部在沉积工艺期间至少部分地将等离子体限制在空间中，从而能够在沉积工艺期间改善沉积在装载的衬底上的层的厚度均匀性和可靠性。

    PE-CVD APPARATUS AND METHOD
    8.
    发明申请
    PE-CVD APPARATUS AND METHOD 有权
    PE-CVD装置和方法

    公开(公告)号：US20160265108A1

    公开(公告)日：2016-09-15

    申请号：US15064631

    申请日：2016-03-09

    申请人： SPTS Technologies Limited

    发明人： DANIEL T. ARCHARD ,  STEPHEN R. BURGESS ,  MARK I. CARRUTHERS ,  ANDREW PRICE ,  KEITH E. BUCHANAN ,  KATHERINE CROOK

    IPC分类号： C23C16/455 ,  C23C16/513

    CPC分类号： C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

    摘要： A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

    摘要翻译： 等离子体增强化学气相沉积（PE-CVD）装置包括：腔室，包括圆周泵浦通道，设置在腔室内的衬底支撑件，用于将气体引入腔室的一个或多个气体入口;用于产生等离子体的等离子体生产装置 在腔室中，以及位于腔室中的上部和下部元件。 上部元件与衬底支撑件间隔开以限制等离子体并且限定第一周向泵送间隙，并且上部元件用作圆周泵送通道的径向向内的壁。 上部和下部元件径向间隔开以限定作为周向泵送通道入口的第二圆周泵送间隙，其中第二圆周泵送间隙比第一圆周泵送间隙宽。

    ICP source design for plasma uniformity and efficiency enhancement
    9.
    发明授权
    ICP source design for plasma uniformity and efficiency enhancement 有权
    ICP源设计用于等离子体均匀性和效率提高

    公开(公告)号：US09431216B2

    公开(公告)日：2016-08-30

    申请号：US14066631

    申请日：2013-10-29

    申请人： Advanced Micro-Fabrication Equipment Inc, Shanghai

    发明人： Songlin Xu ,  Gang Shi ,  Tuqiang Ni

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

    CPC分类号： H01J37/32633 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31

    摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.

    摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部并且位于衬底支撑件的上方，但位于气体注入器的大部分之下，以便重新定向处理气体的流动。