Semiconductor device having a barrier layer
    1.
    发明授权
    Semiconductor device having a barrier layer 有权
    具有阻挡层的半导体器件

    公开(公告)号:US06545354B1

    公开(公告)日:2003-04-08

    申请号:US09499599

    申请日:2000-02-07

    IPC分类号: H01L2940

    摘要: In a semiconductor device such as a CSP, re-wiring is provided on a circuit element formation region of a semiconductor substrate and a columnar electrode for connection with a circuit board is provided on the re-wiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film on the circuit element formation region. A re-wiring is provided over the ground potential layer with a second insulating film interposed. Since the ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region, it is possible to eliminate crosstalk between the re-wiring and a circuit within the circuit element formation region and to freely position the re-wiring without restrictions.

    摘要翻译: 在诸如CSP的半导体器件中,在半导体衬底的电路元件形成区域上设置再布线,并且在重新布线上设置用于与电路板连接的柱状电极。 在除了连接焊盘之外的半导体衬底上设置第一绝缘膜,并且在电路元件形成区域上的第一绝缘膜的上表面上设置连接到接地电位的接地电位层。 在地电位层上提供再布线,其中插入有第二绝缘膜。 由于接地电位层用作防止再布线和电路元件形成区域之间的串扰的阻挡层,因此可以消除电路元件形成区域内的再布线与电路之间的串扰,并且可以自由地定位re 接线无限制