公开(公告)号：US06436819B1

公开(公告)日：2002-08-20

申请号：US09495817

申请日：2000-02-01

申请人： Zhi-Fan Zhang ,  David Pung ,  Nitin Khurana ,  Hong Zhang ,  Roderick Craig Mosely

发明人： Zhi-Fan Zhang ,  David Pung ,  Nitin Khurana ,  Hong Zhang ,  Roderick Craig Mosely

IPC分类号： H01L2144

CPC分类号： H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A method for processing a substrate comprising the formation of a metal nitride/metal stack suitable for use as a barrier/liner for sub-0.18 &mgr;m device fabrication. After a metal nitride layer is deposited upon a metal layer, the metal nitride layer is exposed to a treatment step in a nitrogen-containing environment, e.g., a plasma. The plasma treatment modifies the entire metal nitride layer and a top portion of the underlying metal layer. The plasma adds nitrogen to the top portion of the metal layer, resulting in the formation of a nitrated-metal layer. Aside from reducing the microstructure mismatch across the nitride-metal interface, the plasma treatment also densifies and reduces impurities from the deposited nitride layer. The resulting nitride/metal stack exhibits improved film properties, including enhanced adhesion and barrier characteristics. A composite nitride layer of a desired thickness can also be formed by repeating the deposition and treatment cycles of thinner component nitride layers.

摘要翻译： 一种用于处理衬底的方法，包括形成适合用作亚0.18μm器件制造的屏障/衬垫的金属氮化物/金属叠层。 在将金属氮化物层沉积在金属层上之后，将金属氮化物层暴露于含氮环境（例如等离子体）中的处理步骤。 等离子体处理改变整个金属氮化物层和下面的金属层的顶部。 等离子体向金属层的顶部添加氮，导致形成硝化金属层。 除了减少跨越氮化物 - 金属界面的微结构失配之外，等离子体处理也使沉积的氮化物层致密化和减少杂质。 所得到的氮化物/金属堆叠表现出改进的膜性质，包括增强的粘附性和阻隔特性。 也可以通过重复较薄的氮化物层的沉积和处理循环来形成所需厚度的复合氮化物层。