公开(公告)号：US06436819B1

公开(公告)日：2002-08-20

申请号：US09495817

申请日：2000-02-01

申请人： Zhi-Fan Zhang ,  David Pung ,  Nitin Khurana ,  Hong Zhang ,  Roderick Craig Mosely

发明人： Zhi-Fan Zhang ,  David Pung ,  Nitin Khurana ,  Hong Zhang ,  Roderick Craig Mosely

IPC分类号： H01L2144

CPC分类号： H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A method for processing a substrate comprising the formation of a metal nitride/metal stack suitable for use as a barrier/liner for sub-0.18 &mgr;m device fabrication. After a metal nitride layer is deposited upon a metal layer, the metal nitride layer is exposed to a treatment step in a nitrogen-containing environment, e.g., a plasma. The plasma treatment modifies the entire metal nitride layer and a top portion of the underlying metal layer. The plasma adds nitrogen to the top portion of the metal layer, resulting in the formation of a nitrated-metal layer. Aside from reducing the microstructure mismatch across the nitride-metal interface, the plasma treatment also densifies and reduces impurities from the deposited nitride layer. The resulting nitride/metal stack exhibits improved film properties, including enhanced adhesion and barrier characteristics. A composite nitride layer of a desired thickness can also be formed by repeating the deposition and treatment cycles of thinner component nitride layers.

摘要翻译： 一种用于处理衬底的方法，包括形成适合用作亚0.18μm器件制造的屏障/衬垫的金属氮化物/金属叠层。 在将金属氮化物层沉积在金属层上之后，将金属氮化物层暴露于含氮环境（例如等离子体）中的处理步骤。 等离子体处理改变整个金属氮化物层和下面的金属层的顶部。 等离子体向金属层的顶部添加氮，导致形成硝化金属层。 除了减少跨越氮化物 - 金属界面的微结构失配之外，等离子体处理也使沉积的氮化物层致密化和减少杂质。 所得到的氮化物/金属堆叠表现出改进的膜性质，包括增强的粘附性和阻隔特性。 也可以通过重复较薄的氮化物层的沉积和处理循环来形成所需厚度的复合氮化物层。

公开(公告)号：US20080105201A1

公开(公告)日：2008-05-08

申请号：US11927120

申请日：2007-10-29

申请人： TIMOTHY RONAN ,  Yuanhong Guo ,  Robert Decottignies ,  Todd W. Martin ,  Darryl K. Angelo ,  Song-Moon Suh ,  Nitin Khurana ,  Edward Ng

发明人： TIMOTHY RONAN ,  Yuanhong Guo ,  Robert Decottignies ,  Todd W. Martin ,  Darryl K. Angelo ,  Song-Moon Suh ,  Nitin Khurana ,  Edward Ng

IPC分类号： B05C13/00

CPC分类号： H01L21/6875 ,  H01L21/68742 ,  H01L21/68757

摘要： A support component comprises a support structure having a support surface with one or more quartz contact tips. In one version, the support component comprises a robot blade capable of transferring a substrate into and out of a chamber. The robot blade comprises a plate having a plurality of raised mesas, each raised mesa comprising a quartz contact tip which minimizes contact with the substrate thereby generating fewer contaminant particles during substrate transportation. Other versions of the support component include a heat exchange pedestal, lift pin assembly, and lifting fin assembly.

摘要翻译： 支撑部件包括具有带有一个或多个石英接触尖端的支撑表面的支撑结构。 在一个版本中，支撑部件包括能够将衬底输入和移出腔室的机器人刀片。 机器人刀片包括具有多个凸起的台面的板，每个凸起的台面包括石英接触尖端，其最小化与衬底的接触，从而在衬底输送期间产生更少的污染物颗粒。 支撑部件的其他形式包括热交换基座，升降销组件和提升翅片组件。

公开(公告)号：US6117245A

公开(公告)日：2000-09-12

申请号：US57254

申请日：1998-04-08

申请人： Tushar Mandrekar ,  Anish Tolia ,  Nitin Khurana

发明人： Tushar Mandrekar ,  Anish Tolia ,  Nitin Khurana

IPC分类号： C23C16/42 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00 ,  C23C8/00

CPC分类号： H01J37/3244 ,  H01J37/32522

摘要： The invention provides an apparatus and a method of regulating temperature of a component of a processing chamber comprising providing a thermal conductor thermally connected to the component, providing a controller connected to the thermal conductor, providing at least one temperature sensor connected to the component to supply temperature readings to the controller and regulating heat transfer between the component and the thermal conductor by changing the temperature of the thermal conductor. The invention also provides an apparatus and a method for providing a thermal gradient in a chamber component comprising providing a first thermal conductor at a first temperature attached to the component and providing a second thermal conductor at a second temperature attached to the component.

摘要翻译： 本发明提供了一种调节处理室的部件的温度的装置和方法，包括提供热连接到部件的热导体，提供连接到热导体的控制器，提供连接到部件的至少一个温度传感器以供应 温度读数到控制器，并通过改变热导体的温度来调节部件和热导体之间的热传递。 本发明还提供了一种用于在腔室部件中提供热梯度的装置和方法，该装置和方法包括提供连接到部件上的第一温度的第一热导体，并​​在连接到部件的第二温度下提供第二热导体。

公开(公告)号：US20050252454A1

公开(公告)日：2005-11-17

申请号：US11065702

申请日：2005-02-23

申请人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

发明人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/463 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

摘要： A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.

摘要翻译： 提升组件可以从衬底支撑件提起衬底并输送衬底。 提升组件具有适合围绕基板支撑件的周边的环形尺寸，以及安装在环上的一对弓形翅片，每个弓形翅片包括一对相对的端部，其具有径向向内延伸的凸缘，每个凸缘具有凸起突起 以提升衬底，使得衬底基本上仅接触凸起突起，从而当使用一对翅片将衬底从衬底支撑件提起时，使与凸缘的接触最小化。 提升组件和其它处理室组件可以具有类似金刚石的涂层，其具有（i）碳和氢的互连网络，和（ii）硅和氧。 类金刚石涂层具有摩擦系数小于约0.3，硬度至少约8GPa，金属浓度小于约5×10 12原子/ cm的接触表面 金属的<2> 2。 当直接或间接接触基底时，接触表面减少了基底的污染。

公开(公告)号：US06350320B1

公开(公告)日：2002-02-26

申请号：US09510110

申请日：2000-02-22

申请人： Semyon Sherstinsky ,  Alison Gilliam ,  Paul Smith ,  Leonel A. Zuniga ,  Ted Yoshidome ,  Nitin Khurana ,  Rod Mosely ,  Umesh Madhav Kelkar ,  Joseph Yudovsky ,  Alan Popiolkowski

发明人： Semyon Sherstinsky ,  Alison Gilliam ,  Paul Smith ,  Leonel A. Zuniga ,  Ted Yoshidome ,  Nitin Khurana ,  Rod Mosely ,  Umesh Madhav Kelkar ,  Joseph Yudovsky ,  Alan Popiolkowski

IPC分类号： C23C1600

CPC分类号： H01J37/32862 ,  H01J37/3244

摘要： A gas delivery apparatus and method for directing a flow of gas to the edge of a substrate at an angle to the radial direction of the substrate is provided. The apparatus directs the gas from a gas opening, over a plurality of grooves that are angled relative to a radial line originating at a center of the gas delivery apparatus. Subsequently, the gas is flowed over a portion of the substrate to prevent reactive gases from depositing on selective portions of the substrate.

摘要翻译： 提供一种气体输送装置和方法，用于将气体流引导到基板的边缘与基板的径向方向成一定角度。 该装置引导来自气体开口的气体在相对于源自气体输送装置的中心的径向线成角度的多个凹槽上。 随后，气体流过衬底的一部分，以防止反应性气体沉积在衬底的选择性部分上。

公开(公告)号：US06908865B2

公开(公告)日：2005-06-21

申请号：US10015433

申请日：2001-12-12

申请人： Martin Kranz ,  Srinivas Guggilla ,  Suraj Rengarajan ,  Mei Chang ,  Gongda Yao ,  Nitin Khurana ,  Gilbert Hausmann

发明人： Martin Kranz ,  Srinivas Guggilla ,  Suraj Rengarajan ,  Mei Chang ,  Gongda Yao ,  Nitin Khurana ,  Gilbert Hausmann

IPC分类号： C23G5/00 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/67167 ,  C23G5/00 ,  H01J2237/3355 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/6831 ,  H01L21/76814 ,  H01L21/76871

摘要： Generally, a method for pre-cleaning native oxides and other contaminants from apertures on a substrate is provided. In one embodiment, a method for pre-cleaning apertures on a substrate includes disposing the substrate on a support member in a process chamber, cooling the substrate at least to a temperature of 100 degrees Celsius, and exposing the substrate to a pre-clean process. In another embodiment, a method for pre-cleaning apertures on a substrate includes cooling the substrate at least to a temperature of 100 degrees Celsius in a first chamber, transferring the substrate to a second chamber and pre-cleaning the substrate in the second chamber while maintaining a substrate temperature of 100 degrees Celsius.

摘要翻译： 通常，提供了一种用于从衬底上的孔预先清洁天然氧化物和其它污染物的方法。 在一个实施例中，用于预清洁衬底上的孔的方法包括将衬底设置在处理室中的支撑构件上，将衬底冷却至少至100摄氏度的温度，并将衬底暴露于预清洁过程 。 在另一个实施例中，用于预清洁衬底上的孔的方法包括在第一室中至少将摄氏100度的温度冷却至衬底，将衬底转移到第二腔室并在第二腔室中预先清洁衬底，同时 保持基板温度为100摄氏度。

公开(公告)号：US06345642B1

公开(公告)日：2002-02-12

申请号：US09252716

申请日：1999-02-19

申请人： Ted G. Yoshidome ,  Tushar Mandrekar ,  Nitin Khurana ,  Anish Tolia

发明人： Ted G. Yoshidome ,  Tushar Mandrekar ,  Nitin Khurana ,  Anish Tolia

IPC分类号： B08B304

CPC分类号： F16K27/003 ,  Y10T137/0419 ,  Y10T137/4259 ,  Y10T137/86131 ,  Y10T137/87249 ,  Y10T137/87885

摘要： A valve arrangement is provided that more effectively purges processing liquid from a processing liquid delivery system. With the valve arrangement only a small portion of the processing liquid path having a small wetting perimeter must be purged to affect replacement of a dysfunctional injection valve or any other component within the processing liquid delivery system. The valve arrangement comprises a first and a second isolation valve, a pump valve and purge valve configured to reduce the wetting perimeter defined by the four valves. The valve arrangement allows a dysfunctional injection valve or any other component to be replaced without health risk to humans or damage risk to a processing liquid delivery system employing the valve arrangement. During component replacement, the first and the second isolation valves are closed and the pump and the purge valves are opened so as to purge processing liquid from the isolated volume defined by the four valves. Pump/purge cycles preferably are performed, and the purging process may be performed automatically or manually. Once the isolated volume is purged, one of the isolation valves and the component are removed and replaced as a unit.

摘要翻译： 提供了一种更有效地从处理液体输送系统清洗处理液体的阀装置。 利用阀装置，必须清洗具有小润湿周长的处理液路径的一小部分，以影响功能失调的喷射阀或处理液体输送系统内的任何其它部件的更换。 阀装置包括第一和第二隔离阀，泵阀和净化阀，其构造成减少由四个阀限定的润湿周长。 阀装置允许更换功能失调的注射阀或任何其它部件，而不会对人体造成健康危害，或损害使用阀装置的处理液体输送系统的风险。 在组件更换期间，关闭第一和第二隔离阀，并打开泵和清洗阀，以便从由四个阀限定的隔离容积中清除处理液。 优选执行泵/清洗循环，并且清洗过程可以自动或手动进行。 一旦隔离的容积被清除，隔离阀和组件中的一个被去除并且被替换为一个单元。

公开(公告)号：US06190037B1

公开(公告)日：2001-02-20

申请号：US09253220

申请日：1999-02-19

申请人： Ashok Das ,  Nety Krishna ,  Marc Schweitzer ,  Nalin Patadia ,  Wei Yang ,  Umesh Kelkar ,  Vijay Parkhe ,  Scot Petitt ,  Nitin Khurana

发明人： Ashok Das ,  Nety Krishna ,  Marc Schweitzer ,  Nalin Patadia ,  Wei Yang ,  Umesh Kelkar ,  Vijay Parkhe ,  Scot Petitt ,  Nitin Khurana

IPC分类号： G01J500

CPC分类号： G01J5/041 ,  G01J5/0022

摘要： The present invention provides an apparatus and method for measuring the temperature of a moving radiant object. A probe, such as a pyrometer, is disposed in an opening of a vacuum chamber adjacent a radiation transparent window. The probe defines an optical path which intercepts the radiant object entering or exiting a processing chamber. The radiant object is moved through the optical path and emits electromagnetic waves. The electromagnetic waves are collected by the probe and transmitted to a signal processing unit where the waves are detected and converted to a temperature reading. If desired, the accumulated data may then be used to generate a cooling curve representing the thermal effects experienced by the radiant object. Extrapolation or correlation methods may be used to extend the cooling curve to points in time prior to or after the data collected by the probe.

摘要翻译： 本发明提供了一种用于测量运动辐射物体的温度的装置和方法。 诸如高温计的探针设置在与辐射透明窗相邻的真空室的开口中。 探针限定了拦截进入或离开处理室的辐射物体的光路。 辐射物体通过光路移动并发射电磁波。 电磁波由探头收集并传输到信号处理单元，在该信号处理单元检测波并将其转换为温度读数。 如果需要，则可以使用累积的数据来产生表示辐射物体经历的热效应的冷却曲线。 可以使用外推法或相关方法将冷却曲线延伸到由探针收集的数据之前或之后的时间点。

公开(公告)号：US06358810B1

公开(公告)日：2002-03-19

申请号：US09123690

申请日：1998-07-28

申请人： Charles Dornfest ,  John Egermeier ,  Nitin Khurana

发明人： Charles Dornfest ,  John Egermeier ,  Nitin Khurana

IPC分类号： H01L2120

CPC分类号： H01L28/55 ,  H01L28/60

摘要： The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.

摘要翻译： 本发明提供一种多层半导体存储器件，包括：底层电极，其具有底层，上界面层和设置在底层和上界面层之间的中间调谐层; 顶电极 以及设置在底部电极和顶部电极之间的高介电常数电介质层。 本发明还提供一种用于制造具有高质量HDC材料和低漏电流的电容器的高密度DRAM的装置和方法。 本发明的另一方面提供了一种使高质量HDC膜成核的电极 - 电介质界面。 本发明还提供了一种在高纵横比孔径内制造电容器的装置和方法。

公开(公告)号：US5956608A

公开(公告)日：1999-09-21

申请号：US667842

申请日：1996-06-20

申请人： Nitin Khurana ,  Ted Guo

发明人： Nitin Khurana ,  Ted Guo

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L21/306

CPC分类号： H01L21/76865 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  Y10S438/906

摘要： A process for fabricating electronic devices which includes the steps of providing a structure that includes a substrate with an overlying dielectric layer having one or more contact holes and/or vias formed therein; depositing a barrier layer over the structure so that the barrier layer penetrates into the contact holes and/or vias; plasma etching the deposited barrier layer so as to modify its surface morphology; and after modifying the surface morphology of the deposited barrier layer, depositing a metalization layer over the barrier layer. A two-step preclean to facet upper corners of the holes and/or vias and to clean bottoms of the holes and/or vias is performed prior to the deposition of the barrier layer.

摘要翻译： 一种用于制造电子器件的方法，包括以下步骤：提供包括具有其中形成有一个或多个接触孔和/或通孔的上覆电介质层的衬底的结构; 在结构上沉积阻挡层，使得阻挡层渗透到接触孔和/或通孔中; 等离子体蚀刻沉积的阻挡层以改变其表面形态; 并且在改变沉积的阻挡层的表面形态之后，在阻挡层上沉积金属化层。 在沉积阻挡层之前，先进行将两个孔和/或通孔的上角分开并清洁孔和/或通孔的底部的两步预清洗。