公开(公告)号：US20190196284A1

公开(公告)日：2019-06-27

申请号：US15852313

申请日：2017-12-22

申请人： Ming Zhang ,  Libo Weng ,  Cheng Zhao ,  Yin Qian ,  Chia-Chun Miao ,  Zhiqiang Lin ,  Dyson H. Tai

发明人： Ming Zhang ,  Libo Weng ,  Cheng Zhao ,  Yin Qian ,  Chia-Chun Miao ,  Zhiqiang Lin ,  Dyson H. Tai

IPC分类号： G02F1/1362 ,  G02F1/1343 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341

摘要： A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.

公开(公告)号：US10761385B2

公开(公告)日：2020-09-01

申请号：US15852313

申请日：2017-12-22

申请人： Ming Zhang ,  Libo Weng ,  Cheng Zhao ,  Yin Qian ,  Chia-Chun Miao ,  Zhiqiang Lin ,  Dyson H. Tai

发明人： Ming Zhang ,  Libo Weng ,  Cheng Zhao ,  Yin Qian ,  Chia-Chun Miao ,  Zhiqiang Lin ,  Dyson H. Tai

IPC分类号： G02F1/1362 ,  G02F1/1343 ,  G02F1/1337 ,  G02F1/1341 ,  G02F1/1339 ,  G02F1/1335 ,  G02F1/1333

摘要： A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.

公开(公告)号：US08253178B1

公开(公告)日：2012-08-28

申请号：US13196689

申请日：2011-08-02

申请人： Rongsheng Yang ,  Zhiqiang Lin

发明人： Rongsheng Yang ,  Zhiqiang Lin

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/00 ,  H01L29/735 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： An example complementary metal oxide semiconductor (CMOS) image sensor includes an epitaxial layer, an array of pixels, and a trench capacitor. The array of pixels are formed on a front side of the epitaxial layer in an pixel array area of the image sensor. The array of pixels includes one or more shallow trench isolation structures disposed between adjacent pixels for isolating the pixels in the pixel array area. The trench capacitor is formed on the front side of the epitaxial layer in a peripheral circuitry area of the image sensor.

摘要翻译： 示例性互补金属氧化物半导体（CMOS）图像传感器包括外延层，像素阵列和沟槽电容器。 像素阵列形成在图像传感器的像素阵列区域中的外延层的前侧。 像素阵列包括设置在相邻像素之间的一个或多个浅沟槽隔离结构，用于隔离像素阵列区域中的像素。 沟槽电容器形成在图像传感器的外围电路区域中的外延层的前侧。