公开(公告)号：US10892245B2

公开(公告)日：2021-01-12

申请号：US16514429

申请日：2019-07-17

Applicant: ABB Power Grids Switzerland AG

Inventor： Tobias Wikstroem

IPC: H01L23/00 ,  H01L23/051

Abstract: The invention relates to a semi-fabricated switching device comprising a semiconductor element and a housing comprising a spring system with a ring-shaped washer laterally surrounding the semiconductor element for clamping the semiconductor element between two pole pieces. The washer is deflectable between the pole pieces by a first deflection element, which contacts the washer in a first contact area on a first side, and by a second deflection element, which contacts the washer in a second contact area on a second side. The first contact area is displaced to the second contact area. The first and second deflection element can deflect the washer such that in clamped condition an electrical contact is achievable between the pole pieces and the semiconductor element.

公开(公告)号：US20210384091A1

公开(公告)日：2021-12-09

申请号：US17286737

申请日：2019-10-10

Applicant: ABB Power Grids Switzerland AG

Inventor： Jagoda Dobrzynska ,  Jan Vobecky ,  David Guillon ,  Tobias Wikstroem

IPC: H01L23/051 ,  H01L23/10 ,  H01L23/31 ,  H01L21/56

Abstract: A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

公开(公告)号：US20220181473A1

公开(公告)日：2022-06-09

申请号：US17600812

申请日：2020-04-01

Applicant: ABB POWER GRIDS SWITZERLAND AG

Inventor： Tobias Wikstroem ,  Umamaheswara Vemulapati ,  Thomas Stiasny

IPC: H01L29/74 ,  H01L29/745 ,  H01L29/66

Abstract: A power diode comprises a plurality of diode cells (10). Each diode cell (10) comprises a first conductivity type first anode layer (40), a first conductivity type second anode layer (45) having a lower doping concentration than the first anode layer (40) and being separated from an anode electrode layer (20) by the first anode layer (40), a second conductivity type drift layer (50) forming a pn-junction with the second anode layer (45), a second conductivity type cathode layer (60) being in direct contact with the cathode electrode layer (60), and a cathode-side segmentation layer (67) being in direct contact with the cathode electrode layer (30). A material of the cathode-side segmentation layer (67) is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (102), is below 2·1013 cm−2, or a material of the cathode-side segmentation layer (67) is an insulating material. A horizontal cross-section through each diode cell (10) along a horizontal plane (K1) comprises a first area where the horizontal plane (K1) intersects the second anode layer (45) and a second area where the plane (K1) intersects the drift layer (50).