公开(公告)号：US11107740B2

公开(公告)日：2021-08-31

申请号：US15666858

申请日：2017-08-02

Applicant: ABB Power Grids Switzerland AG ,  Audi AG

Inventor： Jürgen Schuderer ,  Umamaheswara Vemulapati ,  Marco Bellini ,  Jan Vobecky

IPC: H01L23/34 ,  H01L23/14 ,  H01L23/62 ,  H01L25/07 ,  H01L23/373 ,  H01L23/36 ,  H01L23/535 ,  H01L23/538 ,  H01L25/18 ,  H01L29/06

Abstract: A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.

公开(公告)号：US11056582B2

公开(公告)日：2021-07-06

申请号：US16969773

申请日：2019-02-13

Applicant: ABB Power Grids Switzerland AG

Inventor： Jan Vobecky ,  Umamaheswara Vemulapati ,  Munaf Rahimo

IPC: H01L29/747 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: A bidirectional thyristor device includes a semiconductor wafer with a number of layers forming pn junctions. A first main electrode and a first gate electrode are arranged on a first main side of the wafer. A second main electrode and a second gate electrode are arranged on a second main side of the wafer. First emitter shorts penetrate through a first semiconductor layer and second emitter shorts penetrate through a fifth semiconductor layer. In an orthogonal projection onto a plane parallel to the first main side, a first area occupied by the first semiconductor layer and the first emitter shorts overlaps in an overlapping area with a second area occupied by the fifth semiconductor layer and the second emitter shorts. The overlapping area, in which the first area overlaps with the second area, encompasses at least 50% of a total wafer area occupied by the semiconductor wafer.

公开(公告)号：US11031473B2

公开(公告)日：2021-06-08

申请号：US16558935

申请日：2019-09-03

Applicant: ABB Power Grids Switzerland AG

Inventor： Friedhelm Bauer ,  Lars Knoll ,  Marco Bellini ,  Renato Minamisawa ,  Umamaheswara Vemulapati

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.

公开(公告)号：US11043943B2

公开(公告)日：2021-06-22

申请号：US16411716

申请日：2019-05-14

Applicant: ABB Power Grids Switzerland AG

Inventor： Umamaheswara Vemulapati ,  Ulrich Schlapbach ,  Munaf Rahimo

IPC: H03K5/08 ,  H03K17/08 ,  H03K3/02 ,  H03K17/16 ,  H03K17/687 ,  H03K17/567 ,  H03K17/12 ,  H03K17/74

Abstract: A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET into a blocking state.

公开(公告)号：US20220181473A1

公开(公告)日：2022-06-09

申请号：US17600812

申请日：2020-04-01

Applicant: ABB POWER GRIDS SWITZERLAND AG

Inventor： Tobias Wikstroem ,  Umamaheswara Vemulapati ,  Thomas Stiasny

IPC: H01L29/74 ,  H01L29/745 ,  H01L29/66

Abstract: A power diode comprises a plurality of diode cells (10). Each diode cell (10) comprises a first conductivity type first anode layer (40), a first conductivity type second anode layer (45) having a lower doping concentration than the first anode layer (40) and being separated from an anode electrode layer (20) by the first anode layer (40), a second conductivity type drift layer (50) forming a pn-junction with the second anode layer (45), a second conductivity type cathode layer (60) being in direct contact with the cathode electrode layer (60), and a cathode-side segmentation layer (67) being in direct contact with the cathode electrode layer (30). A material of the cathode-side segmentation layer (67) is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (102), is below 2·1013 cm−2, or a material of the cathode-side segmentation layer (67) is an insulating material. A horizontal cross-section through each diode cell (10) along a horizontal plane (K1) comprises a first area where the horizontal plane (K1) intersects the second anode layer (45) and a second area where the plane (K1) intersects the drift layer (50).