公开(公告)号：US11127685B2

公开(公告)日：2021-09-21

申请号：US16737356

申请日：2020-01-08

Applicant: ABB Power Grids Switzerland AG

Inventor： Milad Maleki ,  Fabian Fischer ,  Dominik Trüssel ,  Remi-Alain Guillemin ,  Daniel Schneider

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/498 ,  H01L23/00 ,  H05K3/34

Abstract: A power semiconductor module includes an insulating substrate with a top metallization layer; a semiconductor chip bonded to the top metallization layer; and a terminal welded with a foot to the top metallization layer and electrically interconnected to the semiconductor chip. At least one of the top metallization layer and a bottom metallization layer of the substrate provided opposite to the top metallization layer comprises a plurality of dimples, which are distributed in a connection region below and/or around the welded foot.

公开(公告)号：US11031323B2

公开(公告)日：2021-06-08

申请号：US16558906

申请日：2019-09-03

Applicant: ABB Power Grids Switzerland AG

Inventor： Samuel Hartmann ,  Dominik Truessel ,  Fabian Fischer

IPC: H01L23/498 ,  H01L23/02 ,  H01R31/06 ,  H01R4/34

Abstract: A housing of a power module includes: an encasing for encasing semiconductor elements inside the housing; a power terminal area on the encasing, on which a power terminal plate is provided; an auxiliary terminal area on the encasing at a lower level than the power terminal area; and an interconnecting member with a power terminal connector part and an auxiliary terminal connector part interconnected by a spring part, the spring part is aligned besides the power terminal plate; the interconnecting member is inserted with the power terminal connector part through an opening in the encasing below the power terminal plate, such that the spring part engages the power terminal area besides the power terminal plate and runs to the auxiliary terminal area and the auxiliary terminal connector part is disposed on the auxiliary terminal area.