公开(公告)号：US11031473B2

公开(公告)日：2021-06-08

申请号：US16558935

申请日：2019-09-03

Applicant: ABB Power Grids Switzerland AG

Inventor： Friedhelm Bauer ,  Lars Knoll ,  Marco Bellini ,  Renato Minamisawa ,  Umamaheswara Vemulapati

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.