公开(公告)号：US20220028976A1

公开(公告)日：2022-01-27

申请号：US17311392

申请日：2019-10-22

Applicant: ABB Power Grids Switzerland AG

Inventor： Stephan Wirths ,  Andrei Mihaila ,  Lars Knoll

IPC: H01L29/16 ,  H01L29/739 ,  H01L29/66 ,  H01L29/10

Abstract: Disclosed is a vertical silicon carbide power MOSFET with a 4H-SiC substrate of n+-type as drain and a 4H-Si C epilayer of n−-type, epitaxially grown on the 4H-SiC substrate acting as drift region and a source region of p++-type, a well region of p-type, a channel region of p-type and a contact region of n++-type implanted into the drift region and a metal gate insulated from the source and drift region by a gate-oxide. A high mobility layer with a vertical thickness in a range 0.1 nm to 50 nm exemplarily in the range of 0.5 nm to 10 nm is provided at the interface between the 4H-SiC epilayer and the gate-oxide.

公开(公告)号：US11031473B2

公开(公告)日：2021-06-08

申请号：US16558935

申请日：2019-09-03

Applicant: ABB Power Grids Switzerland AG

Inventor： Friedhelm Bauer ,  Lars Knoll ,  Marco Bellini ,  Renato Minamisawa ,  Umamaheswara Vemulapati

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.

公开(公告)号：US20210020753A1

公开(公告)日：2021-01-21

申请号：US16978560

申请日：2019-03-05

Applicant: ABB Power Grids Switzerland AG

Inventor： Andrei Mihaila ,  Lars Knoll ,  Lukas Kranz

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872 ,  H01L29/20 ,  H01L29/861

Abstract: A power semiconductor device includes a wide-bandgap semiconductor layer having an active region and a termination region that laterally surrounds the active region. The wide-bandgap semiconductor layer has a first recess that is recessed from the first main side in the termination region and surrounds the active region and a second recess that is recessed from the first main side in the active region and is filled with an insulating material. A depth of the second recess is the same as a depth of the first recess. A field plate on the first main side of the wide-bandgap semiconductor layer exposes a first portion of the wide-bandgap semiconductor layer in the termination region.