公开(公告)号：US11107740B2

公开(公告)日：2021-08-31

申请号：US15666858

申请日：2017-08-02

Applicant: ABB Power Grids Switzerland AG ,  Audi AG

Inventor： Jürgen Schuderer ,  Umamaheswara Vemulapati ,  Marco Bellini ,  Jan Vobecky

IPC: H01L23/34 ,  H01L23/14 ,  H01L23/62 ,  H01L25/07 ,  H01L23/373 ,  H01L23/36 ,  H01L23/535 ,  H01L23/538 ,  H01L25/18 ,  H01L29/06

Abstract: A power semiconductor module including at least one power semiconductor chip providing a power electronics switch; and a semiconductor wafer, to which the at least one power semiconductor chip is bonded; wherein the semiconductor wafer is doped, such that it includes a field blocking region and an electrically conducting region on the field blocking region, to which electrically conducting region the at least one power semiconductor chip is bonded.

公开(公告)号：US11031473B2

公开(公告)日：2021-06-08

申请号：US16558935

申请日：2019-09-03

Applicant: ABB Power Grids Switzerland AG

Inventor： Friedhelm Bauer ,  Lars Knoll ,  Marco Bellini ,  Renato Minamisawa ,  Umamaheswara Vemulapati

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.