公开(公告)号：US20190279927A1

公开(公告)日：2019-09-12

申请号：US16423531

申请日：2019-05-28

Applicant: ABB Schweiz AG

Inventor： Samuel Hartmann ,  Dominik Truessel

IPC: H01L23/50 ,  H01L25/07 ,  H01L25/18 ,  H01L23/00 ,  H01L23/492

Abstract: Power semiconductor module, including a base plate with at least one substrate located on the base plate, wherein an electronic circuit is provided on the at least one substrate, wherein located on the at least one substrate are electrical connectors comprising a DC+ power terminal, a DC− power terminal and an AC power terminal and further a control connector, wherein the power semiconductor module is designed as a half-bridge module including a first amount of switching power semiconductor devices and a second amount of switching power semiconductor devices, wherein the base plate includes a contact area, a first device area and a second device area, wherein the contact area is positioned in a center of the base plate such, that the first device area is positioned at a first side of the contact area and that the second device area is positioned at a second side of the contact area, the second side being arranged opposite to the first side, wherein the DC+ power terminal, the DC− power terminal, the AC power terminal and the control connector are positioned in the contact area, wherein the first amount of switching power semiconductor devices is positioned in the first device area and wherein the second amount of switching power semiconductor devices is positioned in the second device area, wherein all the power semiconductor devices in the first device area are located in two parallel lines being aligned parallel to the width of the base plate and wherein all the power semiconductor devices in the second device area are located in two parallel lines being aligned parallel to the width of the base plate.

公开(公告)号：US20190363029A1

公开(公告)日：2019-11-28

申请号：US16531296

申请日：2019-08-05

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC: H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00 ,  H01L23/492

Abstract: The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.

公开(公告)号：US20190393135A1

公开(公告)日：2019-12-26

申请号：US16558906

申请日：2019-09-03

Applicant: ABB Schweiz AG

Inventor： Samuel Hartmann ,  Dominik Truessel ,  Fabian Fischer

IPC: H01L23/498 ,  H01L23/02 ,  H01R31/06 ,  H01R4/34

Abstract: A housing of a power module includes: an encasing for encasing semiconductor elements inside the housing; a power terminal area on the encasing, on which a power terminal plate is provided; an auxiliary terminal area on the encasing at a lower level than the power terminal area; and an interconnecting member with a power terminal connector part and an auxiliary terminal connector part interconnected by a spring part, the spring part is aligned besides the power terminal plate; the interconnecting member is inserted with the power terminal connector part through an opening in the encasing below the power terminal plate, such that the spring part engages the power terminal area besides the power terminal plate and runs to the auxiliary terminal area and the auxiliary terminal connector part is disposed on the auxiliary terminal area.

公开(公告)号：US10854524B2

公开(公告)日：2020-12-01

申请号：US16531296

申请日：2019-08-05

Applicant: ABB Schweiz AG

Inventor： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC: H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/492 ,  H01L23/00

Abstract: The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.