公开(公告)号：US09064925B2

公开(公告)日：2015-06-23

申请号：US13625591

申请日：2012-09-24

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Arnost Kopta ,  Christoph Von Arx ,  Maxi Andenna

IPC: H01L29/739 ,  H01L29/423

CPC classification number: H01L29/7397 ,  H01L29/4232 ,  H01L29/7395

Abstract: A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source region embedded into the first base layer which contacts the emitter electrode and has a higher doping concentration than the drift layer, a first gate electrode in a same plane and lateral to the first base layer, a second base layer in the same plane and lateral to the first base layer, a second gate electrode on top of the emitter side, and a second source region electrically insulated from the second base layer, the second source region and the drift layer by a second insulating layer.

Abstract translation: 在发射极侧的发射电极和集电极侧的集电极之间公开了具有不同导电类型的功率半导体器件。 该器件可以包括漂移层，与发射极直接电接触的第一基极层，嵌入到与发射极电极接触并且具有比漂移层更高的掺杂浓度的第一基极层中的第一源极区域，第一栅极 电极在同一平面中并且与第一基底层相对，第二基底层在同一平面中并且与第一基底层相对，第二栅电极位于发射极侧顶部，第二源极区域与第二基极层电绝缘 基极层，第二源极区域和漂移层通过第二绝缘层。