公开(公告)号：US20160079441A1

公开(公告)日：2016-03-17

申请号：US14851409

申请日：2015-09-11

Applicant: ABB Technology AG

Inventor： Jaroslav Homola ,  Jiri Podzemsky ,  Ladislav Radvan ,  llja Muller

IPC: H01L29/868 ,  H01L21/304 ,  H01L21/223 ,  H01L29/66 ,  H01L29/167

CPC classification number: H01L29/868 ,  H01L21/223 ,  H01L21/304 ,  H01L29/167 ,  H01L29/32 ,  H01L29/6609

Abstract: High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first main side, a second layer of a second conductivity type formed on the second main side and a third layer of the second conductivity type formed between the first layer and the second layer. The first layer has a dopant concentration decreasing from 1019 cm−3 or more adjacent to the first main side of the wafer to 1.5.1015 cm−3 or less at an interface of the first layer with the third layer. The second layer has a dopant concentration decreasing from 1019 cm−3 or more adjacent to the second main side of the wafer to 1.5.1015 cm−3 at an interface of the second layer with the third layer and the third layer has a dopant concentration of 1.5.1015 cm−3 or less.

Abstract translation: 高频功率二极管包括具有第一和第二主侧面的半导体晶片，形成在第一主侧的第一导电类型的第一层，形成在第二主侧的第二导电类型的第二层和第二层 形成在第一层和第二层之间的第二导电类型。 第一层在第一层与第三层的界面处具有从晶片的第一主侧相邻的1019cm-3或更大的掺杂剂浓度降低至1.5.1015cm-3或更小的掺杂浓度。 第二层在第二层与第三层的界面处具有从晶片的第二主侧相邻的1019cm-3或更大的掺杂剂浓度降低至1.5.1015cm-3，并且第三层具有掺杂剂浓度 为1.5×10 15 cm -3以下。

公开(公告)号：US20160329286A1

公开(公告)日：2016-11-10

申请号：US15216182

申请日：2016-07-21

Applicant: ABB Technology AG

Inventor： Jaroslav Homola ,  Ladislav Dort ,  Ladislav Radvan

IPC: H01L23/00 ,  H01L23/051

CPC classification number: H01L23/562 ,  H01L23/051 ,  H01L23/10 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/00

Abstract: A power semiconductor device is disclosed having a power semiconductor element with an upper and lower side, the upper side being located opposite to the lower side; a first and second electrode, and a housing, wherein the power semiconductor element is arranged between the first and second electrode such, that the upper side comprises a first contact portion being in contact with the first electrode and a first free portion not being in contact with the first electrode, and wherein the lower side at least comprises a second contact portion being in contact with the second electrode, and wherein a channel is provided fluidly connecting at least a part of the first free portion with a predetermined degassing point of the housing for guiding an overpressure, which overpressure results from plasma and/or gas occurring in a failure mode, from the first free portion to the predetermined degassing point.

Abstract translation: 公开了一种功率半导体器件，具有具有上侧和下侧的功率半导体元件，上侧面与下侧相对; 第一和第二电极和壳体，其中功率半导体元件布置在第一和第二电极之间，上侧包括与第一电极接触的第一接触部分和不接触的第一自由部分 与所述第一电极接触，并且其中所述下侧至少包括与所述第二电极接触的第二接触部分，并且其中提供通道以流体方式连接所述第一自由部分的至少一部分与所述壳体的预定脱气点 用于引导超压，其由在故障模式中发生的等离子体和/或气体引起的过压从第一自由部分到预定的脱气点。